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北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.136 >

有機金属気相成長法によるInGaAsの成長

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/42040

Title: 有機金属気相成長法によるInGaAsの成長
Other Titles: Metal-Organic Vapor Phase Epitaxy Growth of InGaAs
Authors: 止境, 伸明1 Browse this author
大内, 敦2 Browse this author
大塚, 俊介3 Browse this author
池田, 英治4 Browse this author
大野, 英男5 Browse this author
長谷川, 英機6 Browse this author
Authors(alt): Tomesakai, Nobuaki1
Ohuchi, Atushi2
Ohtsuka, Shunsuke3
Ikeda, Eiji4
Ohno, Hideo5
Hasegawa, Hideki6
Issue Date: 31-Jul-1987
Publisher: 北海道大学
Journal Title: 北海道大學工學部研究報告
Journal Title(alt): Bulletin of the Faculty of Engineering, Hokkaido University
Volume: 136
Start Page: 89
End Page: 97
Type: bulletin (article)
URI: http://hdl.handle.net/2115/42040
Appears in Collections:北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.136

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