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北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.136 >

光伝導法による半絶縁性InP基板の評価

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/42043

Title: 光伝導法による半絶縁性InP基板の評価
Other Titles: Characterization of Semi-Insulating InP Substrates by Photo-Conductance Measurement
Authors: 矢野, 仁之1 Browse this author
大野, 英男2 Browse this author
長谷川, 英機3 Browse this author
沢田, 孝幸4 Browse this author
Authors(alt): Yano, Hitoshi1
Ohno, Hideo2
Hasegawa, Hideki3
Sawada, Takayuki4
Issue Date: 31-Jul-1987
Publisher: 北海道大学
Journal Title: 北海道大學工學部研究報告
Journal Title(alt): Bulletin of the Faculty of Engineering, Hokkaido University
Volume: 136
Start Page: 77
End Page: 88
Type: bulletin (article)
URI: http://hdl.handle.net/2115/42043
Appears in Collections:北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.136

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