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Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.146 >
分子線エピタキシ法によるGaAsおよびInGaAs選択ドープへテロ構造の形成と2次元電子ガスの特性評価
| Title: | 分子線エピタキシ法によるGaAsおよびInGaAs選択ドープへテロ構造の形成と2次元電子ガスの特性評価 |
| Other Titles: | The Growth of GaAs and InGaAs Selectively Doped Hetero-structures by Molecular Beam Epitaxy and Characterization of Two-dimensional Electron Gas |
| Authors: | 松崎, 賢一郎1 Browse this author | | 友沢, 秀征2 Browse this author | | 駱, 季奎3 Browse this author | | 大野, 英男4 Browse this author | | 長谷川, 英機5 Browse this author |
| Authors(alt): | Matsuzaki, Kenichirou1 | | Tomozawa, Hidemasa2 | | Luo, Ji-Kui3 | | Ohno, Hideo4 | | Hasegawa, Hideki5 |
| Issue Date: | 31-May-1989 |
| Publisher: | 北海道大学 |
| Journal Title: | 北海道大學工學部研究報告 |
| Journal Title(alt): | Bulletin of the Faculty of Engineering, Hokkaido University |
| Volume: | 146 |
| Start Page: | 53 |
| End Page: | 61 |
| Type: | bulletin (article) |
| URI: | http://hdl.handle.net/2115/42183 |
| Appears in Collections: | 北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.146
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