HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.146 >

分子線エピタキシ法によるGaAsおよびInGaAs選択ドープへテロ構造の形成と2次元電子ガスの特性評価

Files in This Item:
146_53-62.pdf545.39 kBPDFView/Open
Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/42183

Title: 分子線エピタキシ法によるGaAsおよびInGaAs選択ドープへテロ構造の形成と2次元電子ガスの特性評価
Other Titles: The Growth of GaAs and InGaAs Selectively Doped Hetero-structures by Molecular Beam Epitaxy and Characterization of Two-dimensional Electron Gas
Authors: 松崎, 賢一郎1 Browse this author
友沢, 秀征2 Browse this author
駱, 季奎3 Browse this author
大野, 英男4 Browse this author
長谷川, 英機5 Browse this author
Authors(alt): Matsuzaki, Kenichirou1
Tomozawa, Hidemasa2
Luo, Ji-Kui3
Ohno, Hideo4
Hasegawa, Hideki5
Issue Date: 31-May-1989
Publisher: 北海道大学
Journal Title: 北海道大學工學部研究報告
Journal Title(alt): Bulletin of the Faculty of Engineering, Hokkaido University
Volume: 146
Start Page: 53
End Page: 61
Type: bulletin (article)
URI: http://hdl.handle.net/2115/42183
Appears in Collections:北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.146

Export metadata:

OAI-PMH ( junii2 , jpcoar )

MathJax is now OFF:


 

Feedback - Hokkaido University