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北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.146 >

選択ドープAlGaAs/GaAsヘテロ構造における2次元電子の磁気抵抗効果

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/42190

Title: 選択ドープAlGaAs/GaAsヘテロ構造における2次元電子の磁気抵抗効果
Other Titles: Magnetoresistance of Two Dimensional Electron Gas in AlGaAs/GaAs Selectively Doped Hetrero Structures
Authors: 廣瀬, 達哉1 Browse this author
松崎, 賢一郎2 Browse this author
駱, 季奎3 Browse this author
大野, 英男4 Browse this author
長谷川, 英機5 Browse this author
Authors(alt): Hirose, Tatsuya1
Matsuzaki, Ken-ichiro2
Luo, Ji-Kui3
Ohno, Hideo4
Hasegawa, Hideki5
Issue Date: 31-May-1989
Publisher: 北海道大学
Journal Title: 北海道大學工學部研究報告
Journal Title(alt): Bulletin of the Faculty of Engineering, Hokkaido University
Volume: 146
Start Page: 43
End Page: 51
Type: bulletin (article)
URI: http://hdl.handle.net/2115/42190
Appears in Collections:北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.146

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