原子層エピタキシ法によるInAs，GaAs薄膜の形成と量子井戸および障壁構造の製作


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/42278

Title:	原子層エピタキシ法によるInAs，GaAs薄膜の形成と量子井戸および障壁構造の製作
Other Titles:	Atomic Layer Epitaxy Growth of InAs and GaAs Thin Films and Fabrication of Quantum Wells and Barriers
Authors:	後藤, 修¹ Browse this author
	樋口, 恵一² Browse this author
	長谷川, 英機³ Browse this author
Authors(alt):	Goto, Shu¹
	Higuchi, Keiichi²
	Hasegawa, Hideki³
Issue Date:	24-May-1991
Publisher:	北海道大学
Journal Title:	北海道大學工學部研究報告
Journal Title(alt):	Bulletin of the Faculty of Engineering, Hokkaido University
Volume:	155
Start Page:	73
End Page:	80
Type:	bulletin (article)
URI:	http://hdl.handle.net/2115/42278
Appears in Collections:	北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.155

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