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北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.159 >

原子層エピタキシ法によるInAs/GaAs量子井戸の形成と評価

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/42309

Title: 原子層エピタキシ法によるInAs/GaAs量子井戸の形成と評価
Other Titles: The Fabrication and Properties of InAs/GaAs Quantum Wells by ALE
Authors: 樋口, 恵一1 Browse this author
後藤, 修2 Browse this author
福井, 孝志3 Browse this author
長谷川, 英機4 Browse this author
Authors(alt): Higuchi, Keiichi1
Goto, Shu2
Fukui, Takashi3
Hasegawa, Hideki4
Issue Date: 27-May-1992
Publisher: 北海道大学
Journal Title: 北海道大學工學部研究報告
Journal Title(alt): Bulletin of the Faculty of Engineering, Hokkaido University
Volume: 159
Start Page: 11
End Page: 18
Type: bulletin (article)
URI: http://hdl.handle.net/2115/42309
Appears in Collections:北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.159

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