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北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.159 >
原子層エピタキシ法によるInAs/GaAs量子井戸の形成と評価
Title: | 原子層エピタキシ法によるInAs/GaAs量子井戸の形成と評価 |
Other Titles: | The Fabrication and Properties of InAs/GaAs Quantum Wells by ALE |
Authors: | 樋口, 恵一1 Browse this author | 後藤, 修2 Browse this author | 福井, 孝志3 Browse this author | 長谷川, 英機4 Browse this author |
Authors(alt): | Higuchi, Keiichi1 | Goto, Shu2 | Fukui, Takashi3 | Hasegawa, Hideki4 |
Issue Date: | 27-May-1992 |
Publisher: | 北海道大学 |
Journal Title: | 北海道大學工學部研究報告 |
Journal Title(alt): | Bulletin of the Faculty of Engineering, Hokkaido University |
Volume: | 159 |
Start Page: | 11 |
End Page: | 18 |
Type: | bulletin (article) |
URI: | http://hdl.handle.net/2115/42309 |
Appears in Collections: | 北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.159
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