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Electron transport in a gold nanoparticle assembly structure stabilized by a physisorbed porphyrin derivative
Title: | Electron transport in a gold nanoparticle assembly structure stabilized by a physisorbed porphyrin derivative |
Authors: | Noda, Yuki Browse this author | Noro, Shin-ichiro Browse this author | Akutagawa, Tomoyuki Browse this author | Nakamura, Takayoshi Browse this author |
Issue Date: | 15-Nov-2010 |
Publisher: | American Physical Society |
Journal Title: | Physical Review B |
Volume: | 82 |
Issue: | 20 |
Start Page: | 205420 |
Publisher DOI: | 10.1103/PhysRevB.82.205420 |
Abstract: | Gold nanoparticles stabilized by meso-5,10,15,20-tetrakis(2-thienyl)porphyrin (2T) via physisorption (2T-AuNP) were synthesized, and the electronic transport of assemblies of these films was studied. The adsorption mechanism of 2T on gold nanoparticles was examined using UV-vis-NIR, IR, Raman, and H-1-NMR spectroscopy, which showed no evidence of any covalent bonding between 2T and the gold nanoparticles. In temperature-dependent resistivity measurements, a crossover from thermally assisted hopping to Efros-Shklovskii-type variable-range hopping (ES-VRH) was observed around 50 K on decreasing the temperature. At higher temperatures, the 2T-AuNP assembly structure followed an Arrhenius plot (E-A=15 meV) with ohmic I-V characteristics at each measurement point. On the other hand, the activation energy at lower temperatures decreased nonlinearly in a T-1 plot, and the logarithm of the resistance obeyed a T-1/2 law, corresponding to an ES-VRH mechanism, which is predicted for disordered materials as a variable-range hopping mechanism influenced by strong Coulomb interactions. ES-VRH behavior has been observed previously in saturated molecule/gold nanoparticle assemblies and was confirmed in our 2T-AuNP assembly. Electronically active conjugated molecules were successfully incorporated between the nanoparticles, keeping the electronic structure of the gold nanoparticle and 2T moieties isolated from each other. |
Rights: | ©2010 The American Physical Society |
Type: | article |
URI: | http://hdl.handle.net/2115/44428 |
Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 中村 貴義
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