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Precise slit-width control of niobium apertures for superconducting LEDs

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/44767

Title: Precise slit-width control of niobium apertures for superconducting LEDs
Authors: Huh, Jae-Hoon Browse this author
Hermannstädter, Claus Browse this author
Sato, Hiroyasu Browse this author
Ito, Saki Browse this author
Idutsu, Yasuhiro Browse this author
Sasakura, Hirotaka Browse this author →KAKEN DB
Tanaka, Kazunori Browse this author
Akazaki, Tatsushi Browse this author
Suemune, Ikuo Browse this author →KAKEN DB
Issue Date: 28-Jan-2011
Publisher: IOP Publishing
Journal Title: Nanotechnology
Volume: 22
Issue: 4
Start Page: 045302
Publisher DOI: 10.1088/0957-4484/22/4/045302
PMID: 21169663
Abstract: We introduce a novel three step procedure for precise niobium (Nb)-etching on the nm-scale, including the design of high contrast resist patterning and sacrifice layer formation under high radio frequency (RF) power. We present the results of precise slit fabrication using this technique and discuss its application for the production of superconducting devices, such as, superconductor-semiconductor-superconductor (S-Sm-S) Josephson junctions. For the reactive ion etching (RIE) of Nb we selected CF4 as etchant gas and a positive tone resist to form the etching mask. We found that the combination of resist usage and RIE process allows for etching of thicker Nb layers when utilizing the opposite dependence of the etching rate (ER) on the CF4 pressure in the case of Nb as compared to the resist. Precise slit-width control of 80 nm-thick and 200 nm-thick Nb apertures was performed with three kinds of ER control, for the resist, the Nb, and the underlying layer. S-Sm-S Josephson junctions were fabricated with lengths as small as 80 nm, which can be considered clean and short and thus exhibit critical currents as high as 50 μA. Moreover, possible further applications as for apertures of superconducting light emitting diodes (SC LEDs) are addressed.
Rights: This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher authenticated version is available online at 10.1088/0957-4484/22/4/045302
Type: article (author version)
URI: http://hdl.handle.net/2115/44767
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 許 載勲

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