Temperature-Independent Hole Mobility in Field-Effect Transistors Based on Liquid-Crystalline Semiconductors


Hokkaido University \| Library \| HUSCAP	Advanced Search		言語

	Home
	About HUSCAP
	Open Access Policy

	Browse by Author

Browse
	Communities & Collections

	Scholarly Journals
	Theses
	Doctoral Dissertations Listed by Graduate Schools
	Conference Procs.
	Events

	HUSCAP Senior (in Japanese)

	Societies

	Downloads (country)

For university staff
	How to post your papers to HUSCAP
	Publication of theses
	Helpline about theses publication

Open Archives Compliant

You can search our collection also at:
	Google
	Google Scholar
	CiNii
	IRDB
	OAIster
	NDLTD

Files in This Item:

ToEe94c-11_1720-1726.pdf

3.15 MB

PDF

Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/49110

Title:	Temperature-Independent Hole Mobility in Field-Effect Transistors Based on Liquid-Crystalline Semiconductors
Authors:	Funahashi, Masahiro Browse this author
	Zhang, Fapei Browse this author
	Tamaoki, Nobuyuki Browse this author →KAKEN DB
Keywords:	liquid-crystalline semiconductor
	field-effect transistor
	carrier transport
	field-effect mobility
	phenylterthiophene
Issue Date:	1-Nov-2011
Publisher:	Institute of Electronics, Information and Communication Engineers
Journal Title:	IEICE Transactions on Electronics
Volume:	E94-C
Issue:	11
Start Page:	1720
End Page:	1726
Publisher DOI:	10.1587/transele.E94.C.1720
Abstract:	Thin-film transistors based on Liquid-crystalline phenylterthiophenes, 3-TTPPh-5 and 3-TTPPhF4-6 are fabricated with a spin-coating method. The devices exhibit p-type operation with the mobility on the order of 10^[-2] cm2V^[-1]s^[-1]. The field-effect mobilities of the transistors using 3-TTPPh-5 and 3-TTPPhF4-6 are almost independent of the temperature above room temperature. In particular, the temperature range in which the mobility is constant is between 230 and 350 K for 3-TTPPh-5.
Rights:	Copyright © 2011 The Institute of Electronics, Information and Communication Engineers
Relation:	http://search.ieice.org/
Type:	article
URI:	http://hdl.handle.net/2115/49110
Appears in Collections:	電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 玉置信之

OAI-PMH ( junii2 , jpcoar_1.0 )

- Hokkaido University