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Inter-dot coupling and excitation transfer mechanisms of telecommunication band InAs quantum dots at elevated temperatures

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/49144

Title: Inter-dot coupling and excitation transfer mechanisms of telecommunication band InAs quantum dots at elevated temperatures
Authors: Hermannstädter, C. Browse this author
Jahan, N. A. Browse this author
Huh, J-H Browse this author
Sasakura, H. Browse this author →KAKEN DB
Akahane, K. Browse this author
Sasaki, M. Browse this author
Suemune, I. Browse this author →KAKEN DB
Issue Date: Feb-2012
Publisher: IOP Publishing
Journal Title: New Journal of Physics
Volume: 14
Start Page: 023037
Publisher DOI: 10.1088/1367-2630/14/2/023037
Abstract: We investigate the photoluminescence temperature dependence of individual InAs/InGaAlAs quantum dots emitting in the optical telecommunication bands. The high-density dots are grown on InP substrates and the selection of a smaller dot number is done by the processing of suitable nanometer-sized mesas. Using ensembles of only a few dots inside such mesas, their temperature stability, inter-dot charge transfer, as well as carrier capture and escape mechanisms out of the dots are investigated systematically. This includes the discussion of the dot ensemble and individual dots. Among the single-dot properties, we investigate the transition of emission lines from zero-phonon line to acoustic phonon sideband-dominated line shape with temperature. Moreover, the presence of single recombination lines up to temperatures of about 150K is demonstrated.
Rights: © 2012 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft
Type: article
URI: http://hdl.handle.net/2115/49144
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: Claus Hermannstädter

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