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Fabrication and Current-Voltage Characteristics of Ni Spin Quantum Cross Devices with P3HT:PCBM Organic Materials
| Title: | Fabrication and Current-Voltage Characteristics of Ni Spin Quantum Cross Devices with P3HT:PCBM Organic Materials |
| Authors: | Kaiju, Hideo Browse this author →KAKEN DB | | Kondo, Kenji Browse this author →KAKEN DB | | Basheer, Nubla Browse this author | | Kawaguchi, Nobuyoshi Browse this author | | White, Susanne Browse this author | | Hirata, Akihiko Browse this author | | Ishimaru, Manabu Browse this author | | Hirotsu, Yoshihiko Browse this author | | Ishibashi, Akira Browse this author |
| Keywords: | thin film | | nanoscale | | electrical properties |
| Issue Date: | 2010 |
| Publisher: | Cambridge University Press |
| Journal Title: | MRS Proceedings |
| Volume: | 1252 |
| Start Page: | 1252-J02-08 |
| Publisher DOI: | 10.1557/PROC-1252-J02-08 |
| Abstract: | We have proposed spin quantum cross (SQC) devices, in which organic materials are sandwiched between two edges of magnetic thin films whose edges are crossed, towards the realization of novel beyond-CMOS switching devices. In SQC devices, nanometer-size junctions can be produced since the junction area is determined by the film thickness. In this study, we have fabricated Ni SQC devices with poly-3-hexylthiophene (P3HT): 6, 6-phenyl C61-butyric acid methyl ester (PCBM) organic materials and investigated the current-voltage (I-V) characteristics experimentally and theoretically. As a result of I-V measurements, ohmic I-V characteristics have been obtained at room temperature for Ni SQC devices with P3HT:PCBM organic materials, where the junction area is as small as 16 nm x 16 nm. This experimental result shows quantitative agreement with the theoretical calculation results performed within the framework of the Anderson model under the strong coupling limit. Our calculation also shows that a high on/off ratio beyond 10000:1 can be obtained in Ni SQC devices with P3HT:PCBM organic materials under the weak coupling condition. |
| Rights: | © 2010 Materials Research Society |
| Type: | article |
| URI: | http://hdl.handle.net/2115/49328 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 海住 英生
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