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The fabrication of Ni quantum cross devices with a 17 nm junction and their current-voltage characteristics

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/49333

Title: The fabrication of Ni quantum cross devices with a 17 nm junction and their current-voltage characteristics
Authors: Kaiju, Hideo Browse this author →KAKEN DB
Kondo, Kenji Browse this author →KAKEN DB
Ono, Akito Browse this author
Kawaguchi, Nobuyoshi Browse this author
Won, Jonghan Browse this author
Hirata, Akihiko Browse this author
Ishimaru, Manabu Browse this author
Hirotsu, Yoshihiko Browse this author
Ishibashi, Akira Browse this author
Issue Date: 8-Jan-2010
Publisher: IOP Publishing
Journal Title: Nanotechnology
Volume: 21
Issue: 1
Start Page: 015301
Publisher DOI: 10.1088/0957-4484/21/1/015301
PMID: 19946173
Abstract: Quantum cross (QC) devices which consist of two Ni thin films deposited on polyethylene naphthalate (PEN) substrates with their edges crossing have been fabricated and its current-voltage characteristics have been investigated. The cross-sectional area between the two Ni electrodes, which was made without the use of electron-beam or optical lithography, is as small as 17 nm x 17 nm. We have successfully obtained ohmic current-voltage characteristics, which show good agreement with calculation results within the framework of modified Anderson model. The calculated results also predict a high switching ratio in excess of 100000:1 for QC devices having the molecule sandwiched between the Ni electrodes. This indicates that QC devices having the molecule can be expected to have potential application in novel switching devices.
Rights: This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher authenticated version is available online at 10.1088/0957-4484/21/1/015301
Type: article
URI: http://hdl.handle.net/2115/49333
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 海住 英生

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