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Spin transport in ferromagnet/semiconductor/ferromagnet structures with cubic Dresselhaus spin-orbit-interaction

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Title: Spin transport in ferromagnet/semiconductor/ferromagnet structures with cubic Dresselhaus spin-orbit-interaction
Authors: Kondo, Kenji Browse this author →KAKEN DB
Keywords: ferromagnetism
gallium arsenide
III-V semiconductors
interface magnetism
spin polarised transport
spin-orbit interactions
Issue Date: 1-Apr-2012
Publisher: American Institute of Physics
Journal Title: Journal of Applied Physics
Volume: 111
Issue: 7
Start Page: 07C713
Publisher DOI: 10.1063/1.3677799
Abstract: We have investigated the spin transport in ferromagnet (FM)/semiconductor (SC)/ferromagnet (FM) structures with a central SC barrier region exhibiting cubic Dresselhaus spin-orbit-interaction (SOI). The energy profile of the barrier is assumed to be a square with height V and thickness d along z-direction. The magnetoresistance (MR) ratio has been calculated for three different barriers, GaAs, GaSb, and GaAs without SOI as a function of barrier thickness. We have found that the MR ratio has a negative value for GaAs barrier with SOI except for very thin barrier thickness. In the case of GaSb barrier, the MR ratio changes sign from negative to positive with increasing the barrier thickness. Also, we have calculated the MR ratio with changing the spin coupling constant.
Rights: Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 111, 07C713 (2012) and may be found at
Type: article
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 近藤 憲治

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