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Effect of indium-flush method on the control of photoluminescence energy of highly uniform self-assembled InAs quantum dots by slow molecular beam epitaxy growth
| Title: | Effect of indium-flush method on the control of photoluminescence energy of highly uniform self-assembled InAs quantum dots by slow molecular beam epitaxy growth |
| Authors: | Sasakura, H. Browse this author | | Kayamori, S. Browse this author | | Adachi, S. Browse this author | | Muto, S. Browse this author |
| Issue Date: | 2007 |
| Publisher: | American Institute of Physics |
| Journal Title: | Journal of Applied Physics |
| Volume: | 102 |
| Issue: | 1 |
| Start Page: | 013515-1 |
| End Page: | 013515-4 |
| Publisher DOI: | 10.1063/1.2752598 |
| Abstract: | The control of the emission energy from self-assembled InAs quantum dots has been demonstrated by using indium flush. The low-temperature indium-flush method was found to control the emission energy preserving the high structural uniformity attributed to the slow dot growth. In the standard indium-flush method, where the substrate temperature was raised up from the dot-growth temperature, blueshift larger than the shift by the low-temperature indium flush was observed and was explained reasonably by the enhanced In/Ga-interdiffusion. Also, the effect of AlGaAs capping layer before the indium-flush step was studied. |
| Type: | article |
| URI: | http://hdl.handle.net/2115/49867 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 笹倉 弘理
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