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Enhanced Photon Generation in a Nb/n-InGaAs/p-InP Superconductor/Semiconductor-Diode Light Emitting Device

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/50826

Title: Enhanced Photon Generation in a Nb/n-InGaAs/p-InP Superconductor/Semiconductor-Diode Light Emitting Device
Authors: Sasakura, H. Browse this author →KAKEN DB
Kuramitsu, S. Browse this author
Hayashi, Y. Browse this author
Tanaka, K. Browse this author →KAKEN DB
Akazaki, T. Browse this author
Hanamura, E. Browse this author
Inoue, R. Browse this author
Takayanagi, H. Browse this author
Asano, Y. Browse this author →KAKEN DB
Hermannstädter, C. Browse this author
Kumano, H. Browse this author
Suemune, I. Browse this author →KAKEN DB
Issue Date: Oct-2011
Publisher: American Physical Society
Journal Title: Physical Review Letters
Volume: 107
Issue: 15
Start Page: 157403-1
End Page: 157403-5
Publisher DOI: 10.1103/PhysRevLett.107.157403
PMID: 22107319
Abstract: We experimentally demonstrate Cooper pairs’ drastic enhancement of the band-to-band radiative recombination rate in a semiconductor. Electron Cooper pairs injected from a superconducting electrode into an active layer by the proximity effect recombine with holes injected from a p-type electrode. The recombination of a Cooper pair with p-type carriers dramatically increases the photon generation probability of a light-emitting diode in the optical-fiber communication band. The measured radiative decay time rapidly decreases with decreasing temperature below the superconducting transition temperature of the niobium electrodes. Our results indicate the possibility to open up new interdisciplinary fields between superconductivity and optoelectronics.
Rights: © 2011 American Physical Society
Type: article
URI: http://hdl.handle.net/2115/50826
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 末宗 幾夫

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