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Enhanced Photon Generation in a Nb/n-InGaAs/p-InP Superconductor/Semiconductor-Diode Light Emitting Device
| Title: | Enhanced Photon Generation in a Nb/n-InGaAs/p-InP Superconductor/Semiconductor-Diode Light Emitting Device |
| Authors: | Sasakura, H. Browse this author →KAKEN DB | | Kuramitsu, S. Browse this author | | Hayashi, Y. Browse this author | | Tanaka, K. Browse this author →KAKEN DB | | Akazaki, T. Browse this author | | Hanamura, E. Browse this author | | Inoue, R. Browse this author | | Takayanagi, H. Browse this author | | Asano, Y. Browse this author →KAKEN DB | | Hermannstädter, C. Browse this author | | Kumano, H. Browse this author | | Suemune, I. Browse this author →KAKEN DB |
| Issue Date: | Oct-2011 |
| Publisher: | American Physical Society |
| Journal Title: | Physical Review Letters |
| Volume: | 107 |
| Issue: | 15 |
| Start Page: | 157403-1 |
| End Page: | 157403-5 |
| Publisher DOI: | 10.1103/PhysRevLett.107.157403 |
| PMID: | 22107319 |
| Abstract: | We experimentally demonstrate Cooper pairs’ drastic enhancement of the band-to-band radiative recombination rate in a semiconductor. Electron Cooper pairs injected from a superconducting electrode into an active layer by the proximity effect recombine with holes injected from a p-type electrode. The recombination of a Cooper pair with p-type carriers dramatically increases the photon generation probability of a light-emitting diode in the optical-fiber communication band. The measured radiative decay time rapidly decreases with decreasing temperature below the superconducting transition temperature of the niobium electrodes. Our results indicate the possibility to open up new interdisciplinary fields between superconductivity and optoelectronics. |
| Rights: | © 2011 American Physical Society |
| Type: | article |
| URI: | http://hdl.handle.net/2115/50826 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 末宗 幾夫
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