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Formation and mechanism of multilayer steps on vicinal(001)GaAs surfaces grown by metalorganic vapor phase epitaxy

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Please use this identifier to cite or link to this item:https://doi.org/10.11501/3122266

Title: Formation and mechanism of multilayer steps on vicinal(001)GaAs surfaces grown by metalorganic vapor phase epitaxy
Other Titles: 有機金属気相成長法による(001)微傾斜GaAs表面の多段原子ステップの形成と機構
Authors: Ishizaki, Jun-ya1 Browse this author
Authors(alt): 石崎, 順也1
Issue Date: 25-Mar-1997
Publisher: Hokkaido University
Conffering University: 北海道大学
Degree Report Number: 甲第4108号
Degree Level: 博士
Degree Discipline: 工学
Type: theses (doctoral)
URI: http://hdl.handle.net/2115/51415
Appears in Collections:学位論文 (Theses) > 博士 (工学)

Submitter: 石崎 順也

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