|
Hokkaido University Collection of Scholarly and Academic Papers >
Research Institute for Electronic Science >
Peer-reviewed Journal Articles, etc >
Silver Embedded Nanomesas as Enhanced Single Quantum Dot Emitters in the Telecommunication C Band
| Title: | Silver Embedded Nanomesas as Enhanced Single Quantum Dot Emitters in the Telecommunication C Band |
| Authors: | Huh, Jae-Hoon Browse this author | | Hermannstädter, Claus Browse this author | | Akahane, Kouichi Browse this author | | Jahan, Nahid A. Browse this author | | Sasaki, Masahide Browse this author | | Suemune, Ikuo Browse this author →KAKEN DB |
| Issue Date: | Jun-2012 |
| Publisher: | The Japan Society of Applied Physics |
| Journal Title: | Japanese Journal of Applied Physics |
| Volume: | 51 |
| Start Page: | 06FF12 |
| Publisher DOI: | 10.1143/JJAP.51.06FF12 |
| Abstract: | We use high-density InAs quantum dots, which were grown by molecular beam epitaxy on InP(311)B substrates, as photon sources in the telecommunication C band at approximately 1.55 µm. To select a small numbers of dots, we fabricate sub-micrometer sized mesas by electron beam lithography and reactive ion etching. The benefit of using high-density quantum dot samples is that at least one optically active quantum dot can be expected in every single mesa. We show that the etching rate and resulting mesa shape of the In0.53Al0.22Ga0.25As epitaxial layer can be varied with the chamber pressure during the etching process. Furthermore, under constant pressure and with increasing etching time, the sequential etching of the epitaxial layer and the underneath substrate leads to a significant modification in the mesa shape, too. We demonstrate that the isolation of a small number of quantum dots within one mesa results in the appearance of single quantum dot emission with a narrow line width and minimal spectral overlap between different emission lines. We moreover present significant enhancement of the luminescence collected from single dots in silver-embedded nanomesas when compared with as-etched mesas. |
| Rights: | © 2012 The Japan Society of Applied Physics |
| Relation: | http://jjap.jsap.jp/link?JJAP/51/06FF12/ |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/52475 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
|
Submitter: 末宗 幾夫
|
