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Single-photon emission in telecommunication band from an InAs quantum dot grown on InP with molecular-beam epitaxy

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Title: Single-photon emission in telecommunication band from an InAs quantum dot grown on InP with molecular-beam epitaxy
Authors: Liu, X. Browse this author
Akahane, K. Browse this author
Jahan, N. A. Browse this author
Kobayashi, N. Browse this author
Sasaki, M. Browse this author
Kumano, H. Browse this author
Suemune, I. Browse this author →KAKEN DB
Issue Date: 5-Aug-2013
Publisher: American Institute of Physics
Journal Title: Applied physics letters
Volume: 103
Issue: 6
Publisher DOI: 10.1063/1.4817940
Abstract: We report on the experimental demonstration of a single-photon source based on an InAs quantum dot (QD) on InP grown by molecular-beam epitaxy emitting in the telecommunication band. We develop a method to reduce the QD density to prevent inter-dot coupling via tunneling through coupled excited states. A single InAs QD embedded in an as-etched pillar structure exhibits intense and narrow emission lines. Photon antibunching is clearly observed using superconducting single-photon detectors with high sensitivity, and further improvement of the generated single-photon purity is demonstrated with below-barrier-bandgap excitation. (C) 2013 AIP Publishing LLC.
Rights: Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 103, 061114 (2013) and may be found at
Type: article
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 末宗 幾夫

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