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Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells
| Title: | Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells |
| Authors: | Jahan, Nahid A. Browse this author | | Hermannstädter, Claus Browse this author | | Sasakura, Hirotaka Browse this author →KAKEN DB | | Rotter, Thomas J. Browse this author | | Ahirwar, Pankaj Browse this author | | Balakrishnan, Ganesh Browse this author | | Kumano, Hidekazu Browse this author →KAKEN DB | | Suemune, Ikuo Browse this author →KAKEN DB |
| Issue Date: | 7-Feb-2013 |
| Publisher: | American Institute of Physics (AIP) |
| Journal Title: | Journal of Applied Physics |
| Volume: | 113 |
| Issue: | 5 |
| Start Page: | 053505 |
| Publisher DOI: | 10.1063/1.4789374 |
| Abstract: | GaSb based quantum wells (QWs) show promising optical properties in near-infrared spectral range. In this paper, we present photoluminescence (PL) spectroscopies of InxGa1−xSb/AlyGa1−ySb QWs and discuss the possible thermal quenching and non-radiative carrier recombination mechanisms of the QW structures. The In and Al concentrations as well as the QW thicknesses were precisely determined with the X-ray diffraction measurements. Temperature dependent time-integrated and time-resolved PL spectroscopies resulted in the thermal activation energies of ∼45 meV, and the overall self-consistent calculation of the band parameters based on the measured physical values confirmed that the activation energies are due to the hole escape from the QW to the barriers. The relation of the present single carrier escape mechanism with the other escape mechanisms reported with other material systems was discussed based on the estimated band offset. The relation of the present thermal hole escape to the Auger recombination was also discussed. |
| Rights: | Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics 113(5) 053505 and may be found at http://scitation.aip.org/content/aip/journal/jap/113/5/10.1063/1.4789374. |
| Type: | article |
| URI: | http://hdl.handle.net/2115/54789 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 末宗 幾夫
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