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Effect of indium doping on the transient optical properties of GaN films

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Title: Effect of indium doping on the transient optical properties of GaN films
Authors: Kumano, H.1 Browse this author →KAKEN DB
Hoshi, Ken-ichi Browse this author
Tanaka, Satoru Browse this author
Suemune, Ikuo Browse this author →KAKEN DB
Authors(alt): 熊野, 英和1
Issue Date: Nov-1999
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 75
Issue: 19
Start Page: 2879
End Page: 2881
Publisher DOI: 10.1063/1.125178
Abstract: We have investigated the effects of In doping on the optical properties of GaN films grown by gas-source molecular-beam epitaxy. Time-resolved photoluminescence was carried out to study the transient optical properties of the epitaxial films. In comparison to the undoped GaN film, the spontaneous emission lifetime was prolonged from below 20 to 70 ps by doping with In. Under high-excitation density, stimulated emission was observed from both samples. The threshold excitation density was found to be reduced in the In-doped sample. These significant improvements of the optical properties are attributed to the effective suppression of the formation of the nonradiative recombination centers caused by a change of the growth kinetics induced by a small amount of In supplied during growth of the GaN films.
Rights: Copyright © 1999 American Institute of Physics
Type: article
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 熊野 英和

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