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Effect of indium doping on the transient optical properties of GaN films
| Title: | Effect of indium doping on the transient optical properties of GaN films |
| Authors: | Kumano, H.1 Browse this author →KAKEN DB | | Hoshi, Ken-ichi Browse this author | | Tanaka, Satoru Browse this author | | Suemune, Ikuo Browse this author →KAKEN DB |
| Authors(alt): | 熊野, 英和1 |
| Issue Date: | Nov-1999 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 75 |
| Issue: | 19 |
| Start Page: | 2879 |
| End Page: | 2881 |
| Publisher DOI: | 10.1063/1.125178 |
| Abstract: | We have investigated the effects of In doping on the optical properties of GaN films grown by gas-source molecular-beam epitaxy. Time-resolved photoluminescence was carried out to study the transient optical properties of the epitaxial films. In comparison to the undoped GaN film, the spontaneous emission lifetime was prolonged from below 20 to 70 ps by doping with In. Under high-excitation density, stimulated emission was observed from both samples. The threshold excitation density was found to be reduced in the In-doped sample. These significant improvements of the optical properties are attributed to the effective suppression of the formation of the nonradiative recombination centers caused by a change of the growth kinetics induced by a small amount of In supplied during growth of the GaN films. |
| Rights: | Copyright © 1999 American Institute of Physics |
| Relation: | http://www.aip.org/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/5539 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 熊野 英和
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