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Metalorganic molecular-beam epitaxy and characterization of GaAsNSe/GaAs superlattices emitting around 1.5-µm-wavelength region

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Title: Metalorganic molecular-beam epitaxy and characterization of GaAsNSe/GaAs superlattices emitting around 1.5-µm-wavelength region
Authors: Uesugi, K.1 Browse this author →KAKEN DB
Suemune, I. Browse this author →KAKEN DB
Machida, H. Browse this author
Shimoyama, N. Browse this author
Authors(alt): 植杉, 克弘1
Issue Date: 10-Feb-2003
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 82
Issue: 6
Start Page: 898
End Page: 900
Publisher DOI: 10.1063/1.1544656
Abstract: GaAsNSe/GaAs superlattices (SLs) were grown on GaAs(001) substrates by metalorganic molecular-beam epitaxy. Strong photoluminesence (PL) emission around the 1.5-µm-wavelength region was observed from these SLs without thermal annealing, which suggests that high electron concentrations in GaAsNSe layers increase the radiative recombination rate, making the nonradiative recombination relatively unimportant. It is also demonstrated that (GaAsNSe/GaAs SLs)/(GaAsN/GaAsSb SLs)/GaAs heterostructures are effective to reduce the strain accumulation in the layers, which will also form effective separated confinement heterostructure. The temperature dependence of the PL peak intensity is drastically improved by combining the GaAsN/GaAsSb SLs with the GaAsNSe/GaAs SLs following this scheme. The PL peak intensity observed at 300 K was as large as 20% of that observed at 19 K. This improvement of the optical property will be attributed to the elimination of nonradiative defects by minimizing average strain in the samples.
Rights: Copyright © 2003 American Institute of Physics
Relation: http://www.aip.org/
Type: article
URI: http://hdl.handle.net/2115/5572
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 植杉 克弘

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