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Highly conductive GaAsNSe alloys grown on GaAs and their nonalloyed ohmic properties

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タイトル: Highly conductive GaAsNSe alloys grown on GaAs and their nonalloyed ohmic properties
著者: Uesugi, Katsuhiro 著作を一覧する
Suemune, Ikuo 著作を一覧する
発行日: 2001年11月12日
出版者: American Institute of Physics
誌名: Applied Physics Letters
巻: 79
号: 20
開始ページ: 3284
終了ページ: 3286
出版社 DOI: 10.1063/1.1418449
抄録: Doping properties of Se in GaAsN alloys grown on GaAs (001) substrates by metalorganic-molecular-beam epitaxy were studied. Ditertiarybutylselenide (DtBSe) precursor was used as a Se source. It was found that Se was incorporated into GaAs and GaAsN layers up to a considerable concentration of ~15%. It was also suggested that the N concentrations in GaAsNSe layers were increased by the DtBSe supply. The GaAsNSe layers were heavily doped n type, and the maximum electron concentration was as high as ~1×10(20) cm(–3). With the increase of the carrier concentrations, the resistivity of GaAsNSe dramatically decreased to 1.2×10(–4) Ω cm. This made it possible to have ohmic contacts without thermal annealing, which indicates that GaAsNSe alloys are an attractive candidate for the formation of nonalloyed ohmic contacts.
Rights: Copyright © 2001 American Institute of Physics
Relation (URI): http://www.aip.org/
資料タイプ: article
URI: http://hdl.handle.net/2115/5573
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 植杉 克弘

 

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