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Highly conductive GaAsNSe alloys grown on GaAs and their nonalloyed ohmic properties
Title: | Highly conductive GaAsNSe alloys grown on GaAs and their nonalloyed ohmic properties |
Authors: | Uesugi, Katsuhiro1 Browse this author →KAKEN DB | Suemune, Ikuo Browse this author →KAKEN DB |
Authors(alt): | 植杉, 克弘1 |
Issue Date: | 12-Nov-2001 |
Publisher: | American Institute of Physics |
Journal Title: | Applied Physics Letters |
Volume: | 79 |
Issue: | 20 |
Start Page: | 3284 |
End Page: | 3286 |
Publisher DOI: | 10.1063/1.1418449 |
Abstract: | Doping properties of Se in GaAsN alloys grown on GaAs (001) substrates by metalorganic-molecular-beam epitaxy were studied. Ditertiarybutylselenide (DtBSe) precursor was used as a Se source. It was found that Se was incorporated into GaAs and GaAsN layers up to a considerable concentration of ~15%. It was also suggested that the N concentrations in GaAsNSe layers were increased by the DtBSe supply. The GaAsNSe layers were heavily doped n type, and the maximum electron concentration was as high as ~1×10(20) cm(–3). With the increase of the carrier concentrations, the resistivity of GaAsNSe dramatically decreased to 1.2×10(–4) Ω cm. This made it possible to have ohmic contacts without thermal annealing, which indicates that GaAsNSe alloys are an attractive candidate for the formation of nonalloyed ohmic contacts. |
Rights: | Copyright © 2001 American Institute of Physics |
Relation: | http://www.aip.org/ |
Type: | article |
URI: | http://hdl.handle.net/2115/5573 |
Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 植杉 克弘
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