HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
Research Institute for Electronic Science >
Peer-reviewed Journal Articles, etc >

Highly conductive GaAsNSe alloys grown on GaAs and their nonalloyed ohmic properties

Files in This Item:
APL79-20.pdf52.2 kBPDFView/Open
Please use this identifier to cite or link to this item:

Title: Highly conductive GaAsNSe alloys grown on GaAs and their nonalloyed ohmic properties
Authors: Uesugi, Katsuhiro1 Browse this author →KAKEN DB
Suemune, Ikuo Browse this author →KAKEN DB
Authors(alt): 植杉, 克弘1
Issue Date: 12-Nov-2001
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 79
Issue: 20
Start Page: 3284
End Page: 3286
Publisher DOI: 10.1063/1.1418449
Abstract: Doping properties of Se in GaAsN alloys grown on GaAs (001) substrates by metalorganic-molecular-beam epitaxy were studied. Ditertiarybutylselenide (DtBSe) precursor was used as a Se source. It was found that Se was incorporated into GaAs and GaAsN layers up to a considerable concentration of ~15%. It was also suggested that the N concentrations in GaAsNSe layers were increased by the DtBSe supply. The GaAsNSe layers were heavily doped n type, and the maximum electron concentration was as high as ~1×10(20) cm(–3). With the increase of the carrier concentrations, the resistivity of GaAsNSe dramatically decreased to 1.2×10(–4) Ω cm. This made it possible to have ohmic contacts without thermal annealing, which indicates that GaAsNSe alloys are an attractive candidate for the formation of nonalloyed ohmic contacts.
Rights: Copyright © 2001 American Institute of Physics
Type: article
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 植杉 克弘

Export metadata:

OAI-PMH ( junii2 , jpcoar )

MathJax is now OFF:


 - Hokkaido University