Temperature dependence of band gap energies of GaAsN alloys

Uesugi, Katsuhiro; Suemune, Ikuo; Hasegawa, Tatsuo; Akutagawa, Tomoyuki; Nakamura, Takayoshi

doi:10.1063/1.126010


Hokkaido University \| Library \| HUSCAP	Advanced Search		言語

	Home
	About HUSCAP
	Open Access Policy

	Browse by Author

Browse
	Communities & Collections

	Scholarly Journals
	Theses
	Doctoral Dissertations Listed by Graduate Schools
	Conference Procs.
	Events

	HUSCAP Senior (in Japanese)

	Societies

	Top 50 Papers (last 1 month)
	Downloads (country)

For university staff
	How to post your papers to HUSCAP
	Theses publication info
	Helpline about theses publication

Open Archives Compliant

You can search our collection also at:
	Google
	Google Scholar
	CiNii
	IRDB
	OAIster
	NDLTD

Hokkaido University Collection of Scholarly and Academic Papers >
Research Institute for Electronic Science >
Peer-reviewed Journal Articles, etc >

Temperature dependence of band gap energies of GaAsN alloys

Files in This Item:

APL76-10.pdf

46.31 kB

PDF

View/Open

Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/5574

Title:	Temperature dependence of band gap energies of GaAsN alloys
Authors:	Uesugi, Katsuhiro¹ Browse this author →KAKEN DB
	Suemune, Ikuo Browse this author →KAKEN DB
	Hasegawa, Tatsuo Browse this author
	Akutagawa, Tomoyuki Browse this author →KAKEN DB
	Nakamura, Takayoshi Browse this author →KAKEN DB
Authors(alt):	植杉, 克弘¹
Issue Date:	6-Mar-2000
Publisher:	American Institute of Physics
Journal Title:	Applied Physics Letters
Volume:	76
Issue:	10
Start Page:	1285
End Page:	1287
Publisher DOI:	10.1063/1.126010
Abstract:	The temperature dependence of band gap energies of GaAsN alloys was studied with absorption measurements. As the N concentration in GaAsN increased, the temperature dependence of the band gap energy was clearly reduced in comparison with that of GaAs. The redshift of the absorption edge in GaAsN for the temperature increase from 25 to 297 K was reduced to 60% of that of GaAs for the N concentration larger than ~1%. The differential temperature coefficient of the energy gap at room temperature was also reduced to 70% of that of GaAs. The main factor for this reduced temperature dependence in GaAsN was attributed to the transition from band-like states to nitrogen-related localized states with detailed studies of the temperature-induced shift of the absorption edge.
Rights:	Copyright © 2000 American Institute of Physics
Relation:	http://www.aip.org/
Type:	article
URI:	http://hdl.handle.net/2115/5574
Appears in Collections:	電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 植杉克弘

OAI-PMH ( junii2 , jpcoar_1.0 )

- Hokkaido University