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Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements
| Title: | Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements |
| Authors: | Uesugi, Katsuhiro1 Browse this author →KAKEN DB | | Morooka, Nobuki Browse this author | | Suemune, Ikuo Browse this author →KAKEN DB |
| Authors(alt): | 植杉, 克弘1 |
| Issue Date: | 1-Mar-1999 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 74 |
| Issue: | 9 |
| Start Page: | 1254 |
| End Page: | 1256 |
| Publisher DOI: | 10.1063/1.123516 |
| Abstract: | GaNAs films grown on GaAs(001) substrates by metalorganic molecular beam epitaxy were studied by high-resolution x-ray diffraction (XRD) mapping measurements. The lattice constants of epitaxial films are usually estimated from symmetric and asymmetric XRD 2θ–θ measurements. In this study, it is pointed out that the consideration of the tilt angle between the GaAs(115) and GaNAs(115) planes caused by elastic deformation of the films is crucial to determine the lattice constants of the GaNAs films coherently grown on GaAs substrates. Mapping measurements of (115) XRD (2θ–θ ) –Δω were performed for this purpose. The band gap energy of the films was determined by Fourier transform absorption spectroscopy measurements. The band gap energy bowing measured up to the N composition of 4.5% will be discussed by comparing with other measurements and theoretical calculations. |
| Rights: | IEEE, Applied Physics Letters, 74, 9, 1999, p1254-1256
©1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.” |
| Type: | article |
| URI: | http://hdl.handle.net/2115/5575 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 植杉 克弘
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