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Epitaxial growth of zinc-blende ZnSe/MgS superlattices on (001) GaAs
| Title: | Epitaxial growth of zinc-blende ZnSe/MgS superlattices on (001) GaAs |
| Authors: | Uesugi, Katsuhiro1 Browse this author →KAKEN DB | | Obinata, Toshio Browse this author | | Suemune, Ikuo Browse this author →KAKEN DB | | Kumano, Hidekazu Browse this author →KAKEN DB | | Nakahara, Jun'ichiro Browse this author →KAKEN DB |
| Authors(alt): | 植杉, 克弘1 |
| Issue Date: | 5-Feb-1996 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 68 |
| Issue: | 6 |
| Start Page: | 844 |
| End Page: | 846 |
| Publisher DOI: | 10.1063/1.116552 |
| Abstract: | We report the growth of zinc-blende ZnSe/MgS superlattices (SLs) on GaAs (001) substrates. The SLs were grown with metalorganic vapor phase epitaxy by selecting appropriate precursors for Mg and S. MgS naturally forms rocksalt structures, but zinc-blende MgS layers were grown. The lattice constant of MgS was estimated to be 5.59 Å. X-ray diffraction measurements show that the ZnSe/MgS SLs are grown coherently to the GaAs substrates up to the total thicknesses of ~ 3000 Å. |
| Rights: | IEEE, American Institute of Physics, 68, 6, 1996, p844-846
©1996 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.” |
| Type: | article |
| URI: | http://hdl.handle.net/2115/5576 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 植杉 克弘
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