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Self-Ordering of Nanofacets on Vicinal SiC Surfaces
| Title: | Self-Ordering of Nanofacets on Vicinal SiC Surfaces |
| Authors: | Nakagawa, Hiroshi Browse this author | | Tanaka, Satoru2 Browse this author | | Suemune, Ikuo Browse this author →KAKEN DB |
| Authors(alt): | 田中, 悟2 |
| Issue Date: | 26-Nov-2003 |
| Publisher: | The American Physical Society |
| Journal Title: | Physical Review Letters |
| Volume: | 91 |
| Issue: | 22 |
| Start Page: | 226107 |
| Publisher DOI: | 10.1103/PhysRevLett.91.226107 |
| PMID: | 14683256 |
| Abstract: | Vicinal 4H and 6H-SiC(0001) surfaces have been investigated using atomic force microscopy and cross-sectional high-resolution transmission electron microscopy.We observed the characteristic selfordering of nanofacets on any surface, regardless of polytypes and vicinal angles, after gas etching at high temperature. Two facet planes are typically revealed: (0001) and high index (112n) that are induced by equilibrium surface phase separation. A (112n) plane may have a free energy minimum due to attractive step-step interactions. The differing ordering distances in 4H and 6H polytypes imply the existence of SiC polytypic dependence on nanofaceting. Thus, it should be possible to control SiC surface nanostructures by selecting a polytype, a vicinal angle, and an etching temperature. |
| Rights: | Copyright © 2003 American Physical Society |
| Relation: | http://www.aps.org/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/5646 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 田中 悟
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