HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
Research Institute for Electronic Science >
Peer-reviewed Journal Articles, etc >

Self-Ordering of Nanofacets on Vicinal SiC Surfaces

Files in This Item:
PRL91-22.pdf478.84 kBPDFView/Open
Please use this identifier to cite or link to this item:

Title: Self-Ordering of Nanofacets on Vicinal SiC Surfaces
Authors: Nakagawa, Hiroshi Browse this author
Tanaka, Satoru2 Browse this author
Suemune, Ikuo Browse this author →KAKEN DB
Authors(alt): 田中, 悟2
Issue Date: 26-Nov-2003
Publisher: The American Physical Society
Journal Title: Physical Review Letters
Volume: 91
Issue: 22
Start Page: 226107
Publisher DOI: 10.1103/PhysRevLett.91.226107
PMID: 14683256
Abstract: Vicinal 4H and 6H-SiC(0001) surfaces have been investigated using atomic force microscopy and cross-sectional high-resolution transmission electron microscopy.We observed the characteristic selfordering of nanofacets on any surface, regardless of polytypes and vicinal angles, after gas etching at high temperature. Two facet planes are typically revealed: (0001) and high index (112n) that are induced by equilibrium surface phase separation. A (112n) plane may have a free energy minimum due to attractive step-step interactions. The differing ordering distances in 4H and 6H polytypes imply the existence of SiC polytypic dependence on nanofaceting. Thus, it should be possible to control SiC surface nanostructures by selecting a polytype, a vicinal angle, and an etching temperature.
Rights: Copyright © 2003 American Physical Society
Type: article
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 田中 悟

Export metadata:

OAI-PMH ( junii2 , jpcoar_1.0 )

MathJax is now OFF:


 - Hokkaido University