Structural anisotropy in GaN films grown on vicinal 4H-SiC surfaces by metallorganic molecular-beam epitaxy


Hokkaido University \| Library \| HUSCAP	Advanced Search		言語

	Home
	About HUSCAP
	Open Access Policy

	Browse by Author

Browse
	Communities & Collections

	Scholarly Journals
	Theses
	Doctoral Dissertations Listed by Graduate Schools
	Conference Procs.
	Events

	HUSCAP Senior (in Japanese)

	Societies

	Downloads (country)

For university staff
	How to post your papers to HUSCAP
	Publication of theses
	Helpline about theses publication

Open Archives Compliant

You can search our collection also at:
	Google
	Google Scholar
	CiNii
	IRDB
	OAIster
	NDLTD

Files in This Item:

APL83-8.pdf

382.5 kB

PDF

Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/5647

Title:	Structural anisotropy in GaN films grown on vicinal 4H-SiC surfaces by metallorganic molecular-beam epitaxy
Authors:	Kato, Jun-ichi Browse this author
	Tanaka, Satoru² Browse this author →KAKEN DB
	Yamada, Satoshi Browse this author
	Suemune, Ikuo Browse this author →KAKEN DB
Authors(alt):	田中, 悟²
Issue Date:	25-Aug-2003
Publisher:	American Institute of Physics
Journal Title:	Applied Physics Letters
Volume:	83
Issue:	8
Start Page:	1569
End Page:	1571
Publisher DOI:	10.1063/1.1605791
Abstract:	GaN grown directly on 4H-SiC substrates by metallorganic molecular-beam epitaxy is investigated in terms of nucleation, coalescence, and growth front evolution. The effects of SiC surface configurations such as step and terrace structures on GaN film growth physics are examined in detail. Comparative studies using on-axis and vicinal SiC surfaces indicate distinguishable differences in structural and morphological characteristics. An anisotropic x-ray characteristic is observed for the GaN film deposited on the vicinal stepped SiC surfaces. This is due to preferential nucleation and coalescence of GaN islands along step edges, which are induced by the confinement of adatoms on the narrow terraces on the vicinal SiC surface.
Rights:	Copyright © 2003 American Institute of Physics
Relation:	http://www.aip.org/
Type:	article
URI:	http://hdl.handle.net/2115/5647
Appears in Collections:	電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 田中悟

OAI-PMH ( junii2 , jpcoar_1.0 )

- Hokkaido University