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Theoretical and experimental results of electronic transport of spin quantum cross structure devices

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Title: Theoretical and experimental results of electronic transport of spin quantum cross structure devices
Authors: Kondo, Kenji Browse this author →KAKEN DB
Kaiju, Hideo Browse this author →KAKEN DB
Ishibashi, Akira Browse this author →KAKEN DB
Issue Date: 1-Apr-2009
Publisher: American Institute of Physics
Journal Title: Journal of applied physics
Volume: 105
Issue: 7
Start Page: 07D522-1
End Page: 07D522-3
Publisher DOI: 10.1063/1.3072781
Abstract: Recently, we have proposed quantum cross structure (QCS) devices that consist of two metalthin films deposited on organic films with edge-to-edge configuration like crossed fins for switching devices. In this paper, we propose a spin quantum cross structure (SQCS) device, which is a QCS device consisting of two magnetic thin films. We show theoretical and experimental results of electronic transport characteristics regarding SQCS devices. The calculation of the I-Vcharacteristics has been performed for the SQCS devices with the Nimagnetic thin films for both the electrodes within the framework of the Anderson model. Then, we fabricated a SQCS device with the Nimagnetic thin films and measured the I-Vcharacteristics by a four-terminal method. Also, the calculation of the magnetoresistance ratio has been done as a function of renormalized transfer matrices including magnetostriction effects and the other effects phenomenologically.
Rights: Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at
Type: article
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 近藤 憲治

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