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Three-dimensional deposition of TiN film using low frequency (50 Hz) plasma chemical vapor deposition

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Title: Three-dimensional deposition of TiN film using low frequency (50 Hz) plasma chemical vapor deposition
Authors: Shimozuma, M.1 Browse this author →KAKEN DB
Date, H. Browse this author →KAKEN DB
Iwasaki, T. Browse this author
Tagashira, H. Browse this author
Yoshino, M. Browse this author
Yoshida, K. Browse this author
Authors(alt): 下妻, 光夫1
Issue Date: Jul-1997
Publisher: AVS Science & Technology of Materials, Interfaces, and Processing
Journal Title: Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films
Volume: 15
Issue: 4
Start Page: 1897
End Page: 1901
Publisher DOI: 10.1116/1.580657
Abstract: Titanium nitride (TiN) films have been deposited on three-dimensional substrates by low frequency (50 Hz) plasma chemical vapor deposition method using a TiCl4 + N2 + H2 mixture at a substrate temperature of 550 ℃ with a substrate bias circuit using two diodes. The maximum value of the deposition rate was 1200 nm/h at a substrate bias voltage VB of –150 V and the ratio of flow rate k(N2/TiCl4) = 2. The maximum value of Vickers hardness of deposited TiN films using Micro–Vickers hardness tester was about 2400 Hv at k = 2 and VB = -150 V bias voltage. There were practically no differences between the deposition rates and Vickers hardness on vertical and horizontal substrate surfaces against the surface of electrodes. Resistivity of the films was about 80 µΩ cm at VB from 40 to -150 V with k = 2. However, the hardness of deposited film with no substrate bias was about 1000 Hv. This demonstrates the importance of the substrate bias to make uniform and high quality film deposition on three-dimensional substrate surfaces by setting the substrate in the middle of the interelectrode gap. The composition of deposited TiN films was measured by Auger spectra method. It was found that Ti, N, Cl, O, and C were contained in the deposited TiN films. The at. % value of the Cl content [= Cl/(Ti + N + O + C + Cl)] in the TiN films was about 2% with substrate bias voltage, and the ratio of N/Ti was about 1.2.
Description: Erratum: Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films. 15(6), 1997, p.3170, DOI: 10.1116/1.580863
Type: article
URI: http://hdl.handle.net/2115/5732
Appears in Collections:医学院・医学研究院 (Graduate School of Medicine / Faculty of Medicine) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 下妻 光夫

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