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Thermopower analysis of the electronic structure around the metal-insulator transition in V1-xWxO2

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Title: Thermopower analysis of the electronic structure around the metal-insulator transition in V1-xWxO2
Authors: Katase, Takayoshi Browse this author
Endo, Kenji Browse this author
Ohta, Hiromichi Browse this author →KAKEN DB
Issue Date: 21-Oct-2014
Publisher: American Physical Society
Journal Title: Physical review. B
Volume: 90
Issue: 16
Start Page: 161105-1
End Page: 161105-4
Publisher DOI: 10.1103/PhysRevB.90.161105
Abstract: The electronic structure across the metal-insulator (MI) transition of electron-doped V1-xWxO2 epitaxial films (x = 0-0.06) grown on alpha-Al2O3 substrates was studied by means of thermopower (S) measurements. Significant increase of vertical bar S vertical bar values accompanied by MI transition was observed, and the transition temperatures of S (T-S) decreased with x in a good linear relation with MI transition temperatures. vertical bar S vertical bar values of V1-xWxO2 films at T > T-S were constant at low values of 23 mu VK-1 independently of x, which reflects a metallic electronic structure, whereas those at T < T-S almost linearly decreased with logarithmic W concentrations. The gradient of -213 mu VK-1 agrees well with -k(B)/e ln10 (-198 mu VK-1), suggesting that V1-xWxO2 films have insulating electronic structures with a parabolic density of state around the conduction band bottom.
Rights: ©2014 American Physical Society
Type: article
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 太田 裕道

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