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Improvement of InAs quantum-dot optical properties by strain compensation with GaNAs capping layers

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Title: Improvement of InAs quantum-dot optical properties by strain compensation with GaNAs capping layers
Authors: Zhang, X. Q Browse this author
Ganapathy, S. Browse this author
Suemune, I.3 Browse this author →KAKEN DB
Kumano, H. Browse this author →KAKEN DB
Uesugi, K. Browse this author
Authors(alt): 末宗, 幾夫3
Issue Date: Dec-2003
Publisher: American Institute of Physics.
Journal Title: Applied Physics Letters
Volume: 83
Issue: 22
Start Page: 4524
End Page: 4526
Publisher DOI: 10.1063/1.1629803
Abstract: Two kinds of self-assembled InAs quantum dots (QDs) grown on GaAs (001) substrates were studied. One is capped with GaAs layers and the other with GaNAs strain-compensating layers. Photoluminescence (PL) measurements on the two kinds of InAs QDs showed distinct dependence on the selection of the capping layers. The homogeneity and luminescence efficiency of the InAs QDs were much improved when the net strain was reduced with GaNAs layers. These results demonstrate the importance of net strain compensation for the improved optical quality of InAs QDs.
Rights: Copyright © 2003 American Institute of Physics
Relation: http://www.aip.org/
Type: article
URI: http://hdl.handle.net/2115/5876
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 末宗 幾夫

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