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Photoluminescence study of InAs quantum dots embedded in GaNAs strain compensating layer grown by metalorganic-molecular-beam epitaxy

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Title: Photoluminescence study of InAs quantum dots embedded in GaNAs strain compensating layer grown by metalorganic-molecular-beam epitaxy
Authors: Zhang, X. Q. Browse this author
Ganapathy, Sasikala Browse this author
Kumano, H. Browse this author →KAKEN DB
Uesugi, Kasturi Browse this author
Suemune, Ikuo5 Browse this author →KAKEN DB
Authors(alt): 末宗, 幾夫5
Issue Date: Dec-2002
Publisher: American Institute of Physics
Journal Title: JOURNAL OF APPLIED PHYSICS
Volume: 92
Issue: 11
Start Page: 6813
End Page: 6818
Publisher DOI: 10.1063/1.1516873
Abstract: Self-assembled InAs quantum dots (QDs) embedded in GaN0.007As0.993 strain compensating layers have been grown by metalorganic-molecular-beam epitaxy on a GaAs (001) substrate with a high density of 1×1011 cm–2. The photoluminescence properties have been studied for two periods of InAs quantum dots layers embedded in GaN0.007As0.993 strain compensating layers. Four well-resolved excited-state peaks in the photoluminescence spectra have been observed from these highly packed InAs QDs embedded in the GaN0.007As0.993 strain compensating layers. This indicates that the InAs QDs are uniformly formed and that the excited states in QDs due to the quantum confinement effect are well defined. This is explained by tensile strain in GaNAs layers instead of the usual GaAs layers to relieve the compressive strain formed in InAs QDs to keep the total strain of the system at a minimum.
Rights: Copyright © 2002 American Institute of Physics
Relation: http://www.aip.org/
Type: article
URI: http://hdl.handle.net/2115/5886
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 末宗 幾夫

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