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Characterization of electronic structure around metal-insulator transition in V1-x WxO2 thin films by thermopower measurement

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Title: Characterization of electronic structure around metal-insulator transition in V1-x WxO2 thin films by thermopower measurement
Authors: Katase, Takayoshi Browse this author
Endo, Kenji Browse this author
Ohta, Hiromichi Browse this author →KAKEN DB
Keywords: Vanadium dioxide
Thermopower
Metal-insulator transition
Electronic structure
Issue Date: May-2015
Publisher: The Ceramic Society of Japan
Journal Title: Journal of the Ceramic Society of Japan
Volume: 123
Issue: 1437
Start Page: 307
End Page: 311
Publisher DOI: 10.2109/jcersj2.123.307
Abstract: Electronic structure across the metal-insulator (MI) transition of electron-doped V1-x WxO2 epitaxial films (x = 0-0.06) grown on alpha-Al2O3 substrates was studied by means of thermopower (S) measurements. Significant increase of vertical bar S vertical bar-values accompanied by MI transition was observed, and the transition temperatures of S (T-S) decreased with x in good linear relation with MI transition temperatures. vertical bar S vertical bar values of V1-x WxO2 films at T > T-S were constant at low values of 23 mu VK-1 independently of x, which reflects a metallic electronic structure, whereas, those at T < T-S almost linearly decreased with logarithmic W-concentrations. The gradient of -213 mu VK-1 agrees well with -k(B)/e.ln10 (-198 mu VK-1), suggesting that V1-x WxO2 films have insulating electronic structures with a parabolic density of state around the conduction band bottom.
Rights: ©2015 The Ceramic Society of Japan. All rights reserved.
Type: article
URI: http://hdl.handle.net/2115/59324
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 太田 裕道

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