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Co thickness dependence of structural and magnetic properties in spin quantum cross devices utilizing stray magnetic fields

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Title: Co thickness dependence of structural and magnetic properties in spin quantum cross devices utilizing stray magnetic fields
Authors: Kaiju, Hideo Browse this author →KAKEN DB
Kasa, Haruya Browse this author
Komine, Takashi Browse this author →KAKEN DB
Mori, Sumito Browse this author
Misawa, Takahiro Browse this author
Abe, Taro Browse this author
Nishii, Junji Browse this author →KAKEN DB
Issue Date: 8-May-2015
Publisher: American Institute of Physics (AIP)
Journal Title: Journal of applied physics
Volume: 117
Issue: 17
Start Page: 17C738-1
End Page: 17C738-4
Publisher DOI: 10.1063/1.4917061
Abstract: We investigate the Co thickness dependence of the structural and magnetic properties of Co thin-film electrodes sandwiched between borate glasses in spin quantum cross (SQC) devices that utilize stray magnetic fields. We also calculate the Co thickness dependence of the stray field between the two edges of Co thin-film electrodes in SQC devices using micromagnetic simulation. The surface roughness of Co thin films with a thickness of less than 20 nm on borate glasses is shown to be as small as 0.18 nm, at the same scanning scale as the Co film thickness, and the squareness of the hysteresis loop is shown to be as large as 0.96-1.0. As a result of the establishment of polishing techniques for Co thin-film electrodes sandwiched between borate glasses, we successfully demonstrate the formation of smooth Co edges and the generation of stray magnetic fields from Co edges. Theoretical calculation reveals that a strong stray field beyond 6 kOe is generated when the Co thickness is greater than 10 nm at a junction gap distance of 5 nm. From these experimental and calculation results, it can be concluded that SQC devices with a Co thickness of 10-20 nm can be expected to function as spin-filter devices.
Rights: Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 117, 17C738 (2015) and may be found at http://dx.doi.org/10.1063/1.4917061.
Type: article
URI: http://hdl.handle.net/2115/59519
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 海住 英生

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