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Room-Temperature-Protonation-Driven On-Demand Metal-Insulator Conversion of a Transition Metal Oxide

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/62320

Title: Room-Temperature-Protonation-Driven On-Demand Metal-Insulator Conversion of a Transition Metal Oxide
Authors: Katase, Takayoshi Browse this author
Endo, Kenji Browse this author
Tohei, Tetsuya Browse this author
Ikuhara, Yuichi Browse this author →KAKEN DB
Ohta, Hiromichi Browse this author →KAKEN DB
Keywords: protonation
solid state electrochemistry
tarnsition metal oxide
thin film transister
Issue Date: Jul-2015
Publisher: Wiley-VCH
Journal Title: Advanced Electronic Materials
Volume: 1
Issue: 7
Start Page: 1500063
Publisher DOI: 10.1002/aelm.201500063
Abstract: Room-temperature protonation and metal–insulator conversion of a transition metal oxide (TMO) is demonstrated by all-solid-state thin-film transistor with vanadium dioxide using a water-infiltrated nanoporous glass as a solid electrolyte. This promising result can provide a novel route for TMO-based solid-state electro-optical devices, in particular, smart windows for on-demand infrared shielding.
Rights: © 2015 Wiley-VCH, This is the accepted version of the following article: Advanced Electronic Materials Vol.1, 1500063, which has been published in final form at http://onlinelibrary.wiley.com/doi/10.1002/aelm.201500063/abstract.
Type: article (author version)
URI: http://hdl.handle.net/2115/62320
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 片瀬 貴義

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