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Solid-Phase Epitaxial Growth of A-Site-Ordered Perovskite Sr4-xErxCo4O12-delta: A Room Temperature Ferrimagnetic p-Type Semiconductor

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Title: Solid-Phase Epitaxial Growth of A-Site-Ordered Perovskite Sr4-xErxCo4O12-delta: A Room Temperature Ferrimagnetic p-Type Semiconductor
Authors: Katase, Takayoshi Browse this author
Takahashi, Hidefumi Browse this author
Tohei, Tetsuya Browse this author
Suzuki, Yuki Browse this author
Yamanouchi, Michihiko Browse this author →KAKEN DB
Ikuhara, Yuichi Browse this author
Terasaki, Ichiro Browse this author →KAKEN DB
Ohta, Hiromichi Browse this author →KAKEN DB
Keywords: ordered perovskite
epitaxial film
ferrimagnetic semiconductor
Issue Date: Dec-2015
Publisher: Wiley-VCH
Journal Title: Advanced electronic materials
Volume: 1
Issue: 12
Start Page: 1500199
Publisher DOI: 10.1002/aelm.201500199
Abstract: The oxygen-deficient Sr4-xErxCo4O12-delta (SECO), one of the ordered perovskite oxides, is a room-temperature (RT) ferrimagnetic semiconductor that arises from the A-site-ordered structure. Development of such a material can lead to the realization of spintronic heterojunction devices; however, to this point there have been difficulties in achieving the A-site-ordered structure in SECO thin films. Here, single-crystalline film growth of SECO with perfectly aligned A-site-ordered structure on (LaAlO3)(0.3)(Sr2TaAlO6)(0.7) substrates by solid-phase epitaxy (SPE) method is demonstrated. The brownmillerite-type, A-site-disordered structure of the as-grown epitaxial film clearly changes into well-aligned A-site-ordered structure after heat treatment at 1050 degrees C in air; the aligned ordered structure in the film is clearly visualized at atomic level. This ordering induces ferrimagnetism with Curie temperature (T-c) approximate to 310 K and it is found that the SECO film with p-type semiconductivity exhibits anomalous Hall effect at the temperature up to 300 K, which is suitable for the test bench to demonstrate advanced spintronic heterojunction devices, operating at RT. The present SPE method is expected to serve as a powerful technique for the fabrication of thin films and exploration of potential characteristics of A-site-ordered perovskite oxides.
Rights: This is the accepted version of the following article:, which has been published in final form at Advanced electronic materials, Vol.1(12), December, 2015. This article may be used for non-commercial purposes in accordance with the Wiley Self-Archiving Policy [].
Type: article (author version)
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 片瀬 貴義

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