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Double threshold behavior in a resonance-controlled ZnO random laser
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Title: | Double threshold behavior in a resonance-controlled ZnO random laser |
Authors: | Niyuki, Ryo Browse this author | Fujiwara, Hideki Browse this author →KAKEN DB | Nakamura, Toshihiro Browse this author | Ishikawa, Yoshie Browse this author | Koshizaki, Naoto Browse this author | Tsuji, Takeshi Browse this author | Sasaki, Keiji Browse this author →KAKEN DB |
Issue Date: | Mar-2017 |
Publisher: | American Institute of Physics (AIP) |
Journal Title: | Apl photonics |
Volume: | 2 |
Issue: | 3 |
Start Page: | 36101 |
Publisher DOI: | 10.1063/1.4974334 |
Abstract: | We observed unusual lasing characteristics, such as double thresholds and blue-shift of lasing peak, in a resonance-controlled ZnO random laser. From the analysis of lasing threshold carrier density, we found that the lasing at 1st and 2nd thresholds possibly arises from different mechanisms; the lasing at 1st threshold involves exciton recombination, whereas the lasing at 2nd threshold is caused by electron-hole plasma recombination, which is the typical origin of conventional random lasers. These phenomena are very similar to the transition from polariton lasing to photon lasing observed in a well-defined cavity laser. |
Rights: | Copyright 2017 Author(s). This article is distributed under a Creative Commons Attribution (CC BY) License. | http://creativecommons.org/licenses/by/4.0/ |
Type: | article |
URI: | http://hdl.handle.net/2115/65347 |
Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 藤原 英樹
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