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Inverse Tunnel Magnetocapacitance in Fe/Al-oxide/Fe3O4

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/66593

Title: Inverse Tunnel Magnetocapacitance in Fe/Al-oxide/Fe3O4
Authors: Kaiju, Hideo Browse this author →KAKEN DB
Nagahama, Taro Browse this author
Sasaki, Shun Browse this author
Shimada, Toshihiro Browse this author
Kitakami, Osamu Browse this author
Misawa, Takahiro Browse this author
Fujioka, Masaya Browse this author
Nishii, Junji Browse this author →KAKEN DB
Xiao, Gang Browse this author
Issue Date: 1-Jun-2017
Publisher: Nature Publishing Group
Journal Title: Scientific reports
Volume: 7
Start Page: 2682
Publisher DOI: 10.1038/s41598-017-02361-4
Abstract: Magnetocapacitance (MC) effect, observed in a wide range of materials and devices, such as multiferroic materials and spintronic devices, has received considerable attention due to its interesting physical properties and practical applications. A normal MC effect exhibits a higher capacitance when spins in the electrodes are parallel to each other and a lower capacitance when spins are antiparallel. Here we report an inverse tunnel magnetocapacitance (TMC) effect for the first time in Fe/AlOx/Fe3O4 magnetic tunnel junctions (MTJs). The inverse TMC reaches up to 11.4% at room temperature and the robustness of spin polarization is revealed in the bias dependence of the inverse TMC. Excellent agreement between theory and experiment is achieved for the entire applied frequency range and the wide bipolar bias regions using Debye-Frohlich model (combined with the Zhang formula and parabolic barrier approximation) and spin-dependent drift-diffusion model. Furthermore, our theoretical calculations predict that the inverse TMC effect could potentially reach 150% in MTJs with a positive and negative spin polarization of 65% and -42%, respectively. These theoretical and experimental findings provide a new insight into both static and dynamic spin-dependent transports. They will open up broader opportunities for device applications, such as magnetic logic circuits and multi-valued memory devices.
Rights: https://creativecommons.org/licenses/by/4.0/
Type: article
URI: http://hdl.handle.net/2115/66593
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 海住 英生

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