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Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate

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Title: Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate
Authors: Katase, Takayoshi Browse this author
Endo, Kenji Browse this author
Ohta, Hiromichi Browse this author →KAKEN DB
Issue Date: May-2017
Publisher: American Institute of Physics (AIP)
Journal Title: APL materials
Volume: 5
Issue: 5
Start Page: 56105
Publisher DOI: 10.1063/1.4983276
Abstract: Infrared (IR) transmittance tunable metal-insulator conversion was demonstrated on a glass substrate by using thermochromic vanadium dioxide (VO2) as the active layer in a three-terminal thin-film-transistor-type device withwater-infiltrated glass as the gate insulator. Alternative positive/negative gate-voltage applications induce the reversible protonation/deprotonation of a VO2 channel, and two-orders of magnitude modulation of sheet-resistance and 49% modulation of IR-transmittance were simultaneously demonstrated at room temperature by the metal-insulator phase conversion of VO2 in a non-volatile manner. The present device is operable by the room-temperature protonation in an all-solid-state structure, and thus it will provide a new gateway to future energy-saving technology as an advanced smart window. (C) 2017 Author(s).
Rights: https://creativecommons.org/licenses/by/4.0/
Type: article
URI: http://hdl.handle.net/2115/66594
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 太田 裕道

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