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Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate
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| Title: | Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate |
| Authors: | Katase, Takayoshi Browse this author | | Endo, Kenji Browse this author | | Ohta, Hiromichi Browse this author →KAKEN DB |
| Issue Date: | May-2017 |
| Publisher: | American Institute of Physics (AIP) |
| Journal Title: | APL materials |
| Volume: | 5 |
| Issue: | 5 |
| Start Page: | 56105 |
| Publisher DOI: | 10.1063/1.4983276 |
| Abstract: | Infrared (IR) transmittance tunable metal-insulator conversion was demonstrated on a glass substrate by using thermochromic vanadium dioxide (VO2) as the active layer in a three-terminal thin-film-transistor-type device withwater-infiltrated glass as the gate insulator. Alternative positive/negative gate-voltage applications induce the reversible protonation/deprotonation of a VO2 channel, and two-orders of magnitude modulation of sheet-resistance and 49% modulation of IR-transmittance were simultaneously demonstrated at room temperature by the metal-insulator phase conversion of VO2 in a non-volatile manner. The present device is operable by the room-temperature protonation in an all-solid-state structure, and thus it will provide a new gateway to future energy-saving technology as an advanced smart window. (C) 2017 Author(s). |
| Rights: | https://creativecommons.org/licenses/by/4.0/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/66594 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 太田 裕道
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