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High Thermoelectric Power Factor of High-Mobility 2D Electron Gas

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/68312

Title: High Thermoelectric Power Factor of High-Mobility 2D Electron Gas
Authors: Ohta, Hiromichi Browse this author →KAKEN DB
Kim, Sung Wng Browse this author
Kaneki, Shota Browse this author
Yamamoto, Atsushi Browse this author
Hashizume, Tamotsu Browse this author
Keywords: 2D electron gas
AlGaN/GaN-MOS-HEMT
thermoelectric power factor
Issue Date: Jan-2018
Publisher: John Wiley & Sons
Journal Title: Advanced Science
Volume: 5
Issue: 1
Start Page: 1700696
Publisher DOI: 10.1002/advs.201700696
Abstract: Thermoelectric conversion is an energy harvesting technology that directly converts waste heat from various sources into electricity by the Seebeck effect of thermoelectric materials with a large thermopower (S), high electrical conductivity (σ), and low thermal conductivity (κ). State-of-the-art nanostructuring techniques that significantly reduce κ have realized high-performance thermoelectric materials with a figure of merit (ZT = S2∙σ∙T∙κ−1) between 1.5 and 2. Although the power factor (PF = S2∙σ) must also be enhanced to further improve ZT, the maximum PF remains near 1.5–4 mW m−1 K−2 due to the well-known trade-off relationship between S and σ. At a maximized PF, σ is much lower than the ideal value since impurity doping suppresses the carrier mobility. A metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) structure on an AlGaN/GaN heterostructure is prepared. Applying a gate electric field to the MOS-HEMT simultaneously modulates S and σ of the high-mobility electron gas from −490 μV K−1 and ≈10−1 S cm−1 to −90 μV K−1 and ≈104 S cm−1, while maintaining a high carrier mobility (≈1500 cm2 V−1 s−1). The maximized PF of the high-mobility electron gas is ≈9 mW m−1 K−2, which is a two- to sixfold increase compared to state-of-theart practical thermoelectric materials.
Rights: https://creativecommons.org/licenses/by/4.0/
Type: article
URI: http://hdl.handle.net/2115/68312
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 太田 裕道

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