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Highly conducting leakage-free electrolyte for SrCoOx-based non-volatile memory device
| Title: | Highly conducting leakage-free electrolyte for SrCoOx-based non-volatile memory device |
| Authors: | Katase, Takayoshi Browse this author | | Suzuki, Yuki Browse this author | | Ohta, Hiromichi Browse this author →KAKEN DB |
| Issue Date: | 7-Oct-2017 |
| Publisher: | American Institute of Physics (AIP) |
| Journal Title: | Journal of Applied Physics |
| Volume: | 122 |
| Issue: | 13 |
| Start Page: | 135303 |
| Publisher DOI: | 10.1063/1.5005520 |
| Abstract: | The electrochemical switching of SrCoOx-based non-volatile memory with a thin-film-transistor structure was examined by using liquid-leakage-free electrolytes with different conductivities (sigma) as the gate insulator. We first examined leakage-free water, which is incorporated in the amorphous (a-) 12CaO center dot 7Al(2)O(3) film with a nanoporous structure (Calcium Aluminate with Nanopore), but the electrochemical oxidation/reduction of the SrCoOx layer required the application of a high gate voltage (V-g) up to 20V for a very long current-flowing-time (t) similar to 40min, primarily due to the low sigma [2.0 x 10(-8) S cm(-1) at room temperature (RT)] of leakage-free water. We then controlled the r of the leakage-free electrolyte, infiltrated in the alpha-NaxTaO(3) film with a nanopillar array structure, from 8.0 x 10(-8) S cm(-1) to 2.5 x 10(-6) S cm(-1) at RT by changing the x = 0.01-1.0. As the result, the t, required for the metallization of the SrCoOx layer under small Vg = -3V, becomes two orders of magnitude shorter with increase of the r of the a-NaxTaO3 leakage-free electrolyte. These results indicate that the ion migration in the leakage-free electrolyte is the rate-determining step for the electrochemical switching, compared to the other electrochemical process, and the high r of the leakage-free electrolyte is the key factor for the development of the non-volatile SrCoOx-based electro-magnetic phase switching device. Published by AIP Publishing. |
| Rights: | The following article appeared in Takayoshi Katase, Yuki Suzuki and Hiromichi Ohta, Highly conducting leakage-free electrolyte for SrCoOx-based non-volatile memory device, Journal of Applied Physics 122, 135303 (2017), doi: 10.1063/1.5005520 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.5005520 . |
| Type: | article |
| URI: | http://hdl.handle.net/2115/71636 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 太田 裕道
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