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Highly conducting leakage-free electrolyte for SrCoOx-based non-volatile memory device

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Title: Highly conducting leakage-free electrolyte for SrCoOx-based non-volatile memory device
Authors: Katase, Takayoshi Browse this author
Suzuki, Yuki Browse this author
Ohta, Hiromichi Browse this author →KAKEN DB
Issue Date: 7-Oct-2017
Publisher: American Institute of Physics (AIP)
Journal Title: Journal of Applied Physics
Volume: 122
Issue: 13
Start Page: 135303
Publisher DOI: 10.1063/1.5005520
Abstract: The electrochemical switching of SrCoOx-based non-volatile memory with a thin-film-transistor structure was examined by using liquid-leakage-free electrolytes with different conductivities (sigma) as the gate insulator. We first examined leakage-free water, which is incorporated in the amorphous (a-) 12CaO center dot 7Al(2)O(3) film with a nanoporous structure (Calcium Aluminate with Nanopore), but the electrochemical oxidation/reduction of the SrCoOx layer required the application of a high gate voltage (V-g) up to 20V for a very long current-flowing-time (t) similar to 40min, primarily due to the low sigma [2.0 x 10(-8) S cm(-1) at room temperature (RT)] of leakage-free water. We then controlled the r of the leakage-free electrolyte, infiltrated in the alpha-NaxTaO(3) film with a nanopillar array structure, from 8.0 x 10(-8) S cm(-1) to 2.5 x 10(-6) S cm(-1) at RT by changing the x = 0.01-1.0. As the result, the t, required for the metallization of the SrCoOx layer under small Vg = -3V, becomes two orders of magnitude shorter with increase of the r of the a-NaxTaO3 leakage-free electrolyte. These results indicate that the ion migration in the leakage-free electrolyte is the rate-determining step for the electrochemical switching, compared to the other electrochemical process, and the high r of the leakage-free electrolyte is the key factor for the development of the non-volatile SrCoOx-based electro-magnetic phase switching device. Published by AIP Publishing.
Rights: The following article appeared in Takayoshi Katase, Yuki Suzuki and Hiromichi Ohta, Highly conducting leakage-free electrolyte for SrCoOx-based non-volatile memory device, Journal of Applied Physics 122, 135303 (2017), doi: 10.1063/1.5005520 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.5005520 .
Type: article
URI: http://hdl.handle.net/2115/71636
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 太田 裕道

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