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Robustness of Voltage-induced Magnetocapacitance
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| Title: | Robustness of Voltage-induced Magnetocapacitance |
| Authors: | Kaiju, Hideo Browse this author →KAKEN DB | | Misawa, Takahiro Browse this author | | Nagahama, Taro Browse this author | | Komine, Takashi Browse this author | | Kitakami, Osamu Browse this author | | Fujioka, Masaya Browse this author | | Nishii, Junji Browse this author →KAKEN DB | | Xiao, Gang Browse this author |
| Issue Date: | 2-Oct-2018 |
| Publisher: | Nature Publishing Group |
| Journal Title: | Scientific reports |
| Volume: | 8 |
| Start Page: | 14709 |
| Publisher DOI: | 10.1038/s41598-018-33065-y |
| Abstract: | One of the most important achievements in the field of spintronics is the development of magnetic tunnel junctions (MTJs). MTJs exhibit a large tunneling magnetoresistance (TMR). However, TMR is strongly dependent on biasing voltage, generally, decreasing with applying bias. The rapid decay of TMR was a major deficiency of MTJs. Here we report a new phenomenon at room temperature, in which the tunneling magnetocapacitance (TMC) increases with biasing voltage in an MTJ system based on Co40Fe40B20/Mgo/Co40Fe40B20 . We have observed a maximum TMC value of 102% under appropriate biasing, which is the largest voltage-induced TMC effect ever reported for MTJs. We have found excellent agreement between theory and experiment for the bipolar biasing regions using Debye-Frohlich model combined with quartic barrier approximation and spin-dependent drift-diffusion model. Based on our calculation, we predict that the voltage-induced TMC ratio could reach 1100% in MTJs with a corresponding TMR value of 604%. Our work has provided a new understanding on the voltage-induced AC spin-dependent transport in MTJs. The results reported here may open a novel pathway for spintronics applications, e.g., non-volatile memories and spin logic circuits. |
| Rights: | https://creativecommons.org/licenses/by/4.0/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/71993 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 海住 英生
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