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Robustness of Voltage-induced Magnetocapacitance

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Title: Robustness of Voltage-induced Magnetocapacitance
Authors: Kaiju, Hideo Browse this author →KAKEN DB
Misawa, Takahiro Browse this author
Nagahama, Taro Browse this author
Komine, Takashi Browse this author
Kitakami, Osamu Browse this author
Fujioka, Masaya Browse this author
Nishii, Junji Browse this author →KAKEN DB
Xiao, Gang Browse this author
Issue Date: 2-Oct-2018
Publisher: Nature Publishing Group
Journal Title: Scientific reports
Volume: 8
Start Page: 14709
Publisher DOI: 10.1038/s41598-018-33065-y
Abstract: One of the most important achievements in the field of spintronics is the development of magnetic tunnel junctions (MTJs). MTJs exhibit a large tunneling magnetoresistance (TMR). However, TMR is strongly dependent on biasing voltage, generally, decreasing with applying bias. The rapid decay of TMR was a major deficiency of MTJs. Here we report a new phenomenon at room temperature, in which the tunneling magnetocapacitance (TMC) increases with biasing voltage in an MTJ system based on Co40Fe40B20/Mgo/Co40Fe40B20 . We have observed a maximum TMC value of 102% under appropriate biasing, which is the largest voltage-induced TMC effect ever reported for MTJs. We have found excellent agreement between theory and experiment for the bipolar biasing regions using Debye-Frohlich model combined with quartic barrier approximation and spin-dependent drift-diffusion model. Based on our calculation, we predict that the voltage-induced TMC ratio could reach 1100% in MTJs with a corresponding TMR value of 604%. Our work has provided a new understanding on the voltage-induced AC spin-dependent transport in MTJs. The results reported here may open a novel pathway for spintronics applications, e.g., non-volatile memories and spin logic circuits.
Type: article
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 海住 英生

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