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Silicon Quantum Dot Light Emitting Diode at 620 nm
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| Title: | Silicon Quantum Dot Light Emitting Diode at 620 nm |
| Authors: | Yamada, Hiroyuki Browse this author | | Shirahata, Naoto Browse this author |
| Keywords: | quantum dot | | silicon nanocrystals | | light emitting diode |
| Issue Date: | May-2019 |
| Publisher: | MDPI |
| Journal Title: | Micromachines |
| Volume: | 10 |
| Issue: | 5 |
| Start Page: | 318 |
| Publisher DOI: | 10.3390/mi10050318 |
| Abstract: | Here we report a quantum dot light emitting diode (QLED), in which a layer of colloidal silicon quantum dots (SiQDs) works as the optically active component, exhibiting a strong electroluminescence (EL) spectrum peaking at 620 nm. We could not see any fluctuation of the EL spectral peak, even in air, when the operation voltage varied in the range from 4 to 5 V because of the possible advantage of the inverted device structure. The pale-orange EL spectrum was as narrow as 95 nm. Interestingly, the EL spectrum was narrower than the corresponding photoluminescence (PL) spectrum. The EL emission was strong enough to be seen by the naked eye. The currently obtained brightness (approximate to 4200 cd/m(2)), the 0.033% external quantum efficiency (EQE), and a turn-on voltage as low as 2.8 V show a sufficiently high performance when compared to other orange-light-emitting Si-QLEDs in the literature. We also observed a parasitic emission from the neighboring compositional layer (i.e., the zinc oxide layer), and its intensity increased with the driving voltage of the device. |
| Rights: | https://creativecommons.org/licenses/by/4.0/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/74998 |
| Appears in Collections: | 総合化学院 (Graduate School of Chemical Sciences and Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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