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Fast operation of a WO3-based solid-state electrochromic transistor
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| Title: | Fast operation of a WO3-based solid-state electrochromic transistor |
| Authors: | Onozato, Takaki Browse this author | | Nezu, Yukio Browse this author | | Cho, Hai Jun Browse this author | | Ohta, Hiromichi Browse this author →KAKEN DB |
| Issue Date: | Feb-2019 |
| Publisher: | American Institute of Physics (AIP) |
| Journal Title: | AIP Advances |
| Volume: | 9 |
| Issue: | 2 |
| Start Page: | 025122 |
| Publisher DOI: | 10.1063/1.5089604 |
| Abstract: | Electrochromic transistors (ECTs) have attracted attention as advanced memory technology because one can use both electrochromism and switching of electrical conductivity in a nonvolatile manner. Although several solid-state ECTs have been proposed so far, their operating speed is still slow (operating time >1 min) as compared to liquid-based ECTs (similar to 20 s) due to their asymmetric gate-source electrode configuration. Here we demonstrate a fast operation of a solid-state ECT. We fabricated a solid-state ECT with three terminal gate-source-drain electrodes using an amorphous WO3 film as the electrochromic material and amorphous TaOx as the solid electrolyte. By the insertion of a thin ZnO layer between the source and drain electrodes to achieve pseudo symmetric gate-source electrode configuration, we greatly reduced the operation time to less than 1 s at +/- 3 V application while keeping the on-to-off ratio of similar to 30. The present approach is effective to improve the operating speed of ECTs and may be practically used in advanced memory technologies. (C) 2019 Author(s). |
| Rights: | © 2019 Takaki Onozato, Yukio Nezu, Hai Jun Cho, and Hiromichi Ohta | | https://creativecommons.org/licenses/by/4.0/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/75112 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 太田 裕道
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