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Fast operation of a WO3-based solid-state electrochromic transistor

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Title: Fast operation of a WO3-based solid-state electrochromic transistor
Authors: Onozato, Takaki Browse this author
Nezu, Yukio Browse this author
Cho, Hai Jun Browse this author
Ohta, Hiromichi Browse this author →KAKEN DB
Issue Date: Feb-2019
Publisher: American Institute of Physics (AIP)
Journal Title: AIP Advances
Volume: 9
Issue: 2
Start Page: 025122
Publisher DOI: 10.1063/1.5089604
Abstract: Electrochromic transistors (ECTs) have attracted attention as advanced memory technology because one can use both electrochromism and switching of electrical conductivity in a nonvolatile manner. Although several solid-state ECTs have been proposed so far, their operating speed is still slow (operating time >1 min) as compared to liquid-based ECTs (similar to 20 s) due to their asymmetric gate-source electrode configuration. Here we demonstrate a fast operation of a solid-state ECT. We fabricated a solid-state ECT with three terminal gate-source-drain electrodes using an amorphous WO3 film as the electrochromic material and amorphous TaOx as the solid electrolyte. By the insertion of a thin ZnO layer between the source and drain electrodes to achieve pseudo symmetric gate-source electrode configuration, we greatly reduced the operation time to less than 1 s at +/- 3 V application while keeping the on-to-off ratio of similar to 30. The present approach is effective to improve the operating speed of ECTs and may be practically used in advanced memory technologies. (C) 2019 Author(s).
Rights: © 2019 Takaki Onozato, Yukio Nezu, Hai Jun Cho, and Hiromichi Ohta
Type: article
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 太田 裕道

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