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Effects of vacuum annealing on the electron mobility of epitaxial La-doped BaSnO3 films
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| Title: | Effects of vacuum annealing on the electron mobility of epitaxial La-doped BaSnO3 films |
| Authors: | Cho, Hai Jun Browse this author | | Onozato, Takaki Browse this author | | Wei, Mian Browse this author | | Sanchela, Anup Browse this author | | Ohta, Hiromichi Browse this author →KAKEN DB |
| Issue Date: | Feb-2019 |
| Publisher: | American Institute of Physics (AIP) |
| Journal Title: | APL materials |
| Volume: | 7 |
| Issue: | 2 |
| Start Page: | 022507 |
| Publisher DOI: | 10.1063/1.5054154 |
| Abstract: | Wide bandgap (E-g similar to 3.1 eV) La-doped BaSnO3 (LBSO) has attracted increasing attention as one of the transparent oxide semiconductors since its bulk single crystal shows a high carrier mobility (similar to 320 cm(2) V-1 s(-1)) with a high carrier concentration (similar to 10(20) cm(-3)). For this reason, many researchers have fabricated LBSO epitaxial films thus far, but the obtainable carrier mobility is substantially low compared to that of single crystals due to the formation of the lattice/structural defects. Here we report that the mobility suppression in LBSO films can be lifted by a simple vacuum annealing process. The oxygen vacancies generated from vacuum annealing reduced the thermal stability of LBSO films on MgO substrates, which increased their carrier concentrations and lateral grain sizes at elevated temperatures. As a result, the carrier mobilities were greatly improved, which does not occur after heat treatment in air. We report a factorial design experiment for the vacuum annealing of LBSO films on MgO substrates and discuss the implications of the results. Our findings expand our current knowledge on the point defect formation in epitaxial LBSO films and show that vacuum annealing is a powerful tool for enhancing the mobility values of LBSO films. (C) 2018 Author(s). |
| Rights: | © 2019 Hai Jun Cho, Takaki Onozato, Mian Wei, Anup Sanchela, and Hiromichi Ohta | | https://creativecommons.org/licenses/by/4.0/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/75115 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 太田 裕道
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