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Current-induced effective magnetic field in La0.67Sr0.33MnO3/LaAlO3/SrTiO3 structures
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| Title: | Current-induced effective magnetic field in La0.67Sr0.33MnO3/LaAlO3/SrTiO3 structures |
| Authors: | Yamanouchi, Michihiko Browse this author →KAKEN DB | | Oyamada, Tatsuro Browse this author | | Ohta, Hiromichi Browse this author →KAKEN DB |
| Issue Date: | 1-Jan-2020 |
| Publisher: | American Institute of Physics (AIP) |
| Journal Title: | AIP Advances |
| Volume: | 10 |
| Issue: | 1 |
| Start Page: | 015129 |
| Publisher DOI: | 10.1063/1.5129283 |
| Abstract: | We investigate the current-induced effective magnetic field H-eff in La0.67Sr0.33MnO3 (18)/LaAlO3(0,2,6)/SrTiO3 (LSMO/LAO/STO) structures by using the planar Hall effect (PHE), where numbers in parentheses give the nominal thickness of the given layer in unit cells. In all the structures, applying an in-plane current creates an in-plane H-eff orthogonal to the current direction, and the direction of H-eff for the LSMO/LAO(6)/STO structure is opposite to that for the LSMO/LAO(0,2)/STO structures. At low temperature, the sign of the PHE coefficient originating from the spin-orbit interaction (SOI) for the LSMO/LAO(6)/STO structure is also opposite to that for the LSMO/LAO(0,2)/STO structures, which suggests that the SOI in the LSMO layer is modified by the LAO(6)/STO structure. The direction of H-eff is consistent with that induced by the SOI at the interface of the LSMO layer, and thus the opposite-polarity H-eff detected in the LSMO/LAO(6)/STO structure can be related to the SOI variation induced by the LAO(6)/STO structure. |
| Rights: | Copyright 2020 Author(s). This article is distributed under a Creative Commons Attribution (CC BY) License. | | https://creativecommons.org/licenses/by/4.0/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/78652 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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