HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
Research Institute for Electronic Science >
Peer-reviewed Journal Articles, etc >

Interfacial Structure-Modulated Plasmon-Induced Water Oxidation on Strontium Titanate

This item is licensed under: Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International

Files in This Item:

The file(s) associated with this item can be obtained from the following URL:https://doi.org/10.1021/acsaem.0c00648


Title: Interfacial Structure-Modulated Plasmon-Induced Water Oxidation on Strontium Titanate
Authors: Shi, Xu Browse this author
Li, Xiaowei Browse this author
Toda, Takahiro Browse this author
Oshikiri, Tomoya Browse this author →KAKEN DB
Ueno, Kosei Browse this author →KAKEN DB
Suzuki, Kentaro Browse this author
Murakoshi, Kei Browse this author
Misawa, Hiroaki Browse this author →KAKEN DB
Keywords: interface states
localized surface plasmon resonance
water oxidation
strontium titanate
surface orientation
in situ electrochemical surface-enhanced Raman scattering
Issue Date: 22-Jun-2020
Publisher: American Chemical Society
Journal Title: ACS applied energy materials
Volume: 3
Issue: 6
Start Page: 5675
End Page: 5683
Publisher DOI: 10.1021/acsaem.0c00648
Abstract: Plasmon-induced carrier transfer at metallic nanoparticle/semiconductor heterojunctions has received great attention because of its tremendous potential in applications, such as photocatalysis and photoelectric and energy conversion. The interfacial structure of the heterojunction is known to play an important role in charge transfer as well as the subsequent chemical reactions. Here, we studied the Au nanoparticle (Au-NP)-loaded (100)-, (110)-, and (111)-oriented single-crystalline strontium titanate (STO) as a model to investigate the effects of interfacial structure on the plasmon-induced charge separation between the metallic nanoparticles and semiconductors. Via photoelectrochemical characterizations, we found that the efficiency of the plasmon-induced water oxidation reaction on STO(100) is more than 1.4 times higher than that on the other two orientation facets. This enhancement was demonstrated to stem from the high oxidation ability of plasmon-induced holes captured in the surface states. Furthermore, the molecular processes of water oxidation were investigated by monitoring the surface oxidation status of Au-NP/STO as intermediates of plasmon-induced water oxidation using in situ electrochemical surface-enhanced Raman spectroscopy. The onset potential of Au-O vibrations on Au-NP/STO(100) was determined to be 0.4 V more negative than that of Au-NP/STO(110), further confirming the higher oxidation ability of the plasmon-induced holes. Our observation provides an opportunity to efficiently modulate plasmon-excited hot-carrier reaction processes for photochemical applications through interfacial engineering.
Rights: https://creativecommons.org/licenses/by-nc-nd/4.0/
Type: article
URI: http://hdl.handle.net/2115/79090
Appears in Collections:電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Export metadata:

OAI-PMH ( junii2 , jpcoar_1.0 )

MathJax is now OFF:


 

 - Hokkaido University