|
Hokkaido University Collection of Scholarly and Academic Papers >
Research Institute for Electronic Science >
Peer-reviewed Journal Articles, etc >
Effect of lattice distortions on the electron and thermal transport properties of transparent oxide semiconductor Ba1-xSrxSnO3 solid solution films
| Title: | Effect of lattice distortions on the electron and thermal transport properties of transparent oxide semiconductor Ba1-xSrxSnO3 solid solution films |
| Authors: | Cho, Hai Jun Browse this author | | Sato, Koichi Browse this author | | Wei, Mian Browse this author | | Kim, Gowoon Browse this author | | Ohta, Hiromichi Browse this author →KAKEN DB |
| Issue Date: | 21-Mar-2020 |
| Publisher: | American Institute of Physics (AIP) |
| Journal Title: | Journal of Applied Physics |
| Volume: | 127 |
| Issue: | 11 |
| Start Page: | 115701 |
| Publisher DOI: | 10.1063/5.0002172 |
| Abstract: | La-doped ASnO(3) (A=Ba and Sr) have great potential as advanced transparent oxide semiconductors due to their large optical bandgap and relatively high electron mobility. The bandgap of Ba1-xSrxSnO3 solid solution increases from 3.2 eV (BaSnO3) to 4.6 eV (SrSnO3) with x. However, the increase in the bandgap is accompanied by reductions in the electrical conductivity. The versatility in the changes in the electrical properties is not trivial, and property optimization has been challenging. Here, we propose a simple metric for quantifying the transport properties of ASnO(3). We investigated the electron/thermal transport properties of Ba1-xSrxSnO3 solid solution films and their relationship with the lattice distortion. The results suggest that all the transport properties of Ba1-xSrxSnO3 are dominated by the lattice distortion. This phenomenon is attributed to the distortions in the SnO6 octahedron, which consists of the conduction band. Published under license by AIP Publishing. |
| Rights: | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Cho Hai Jun, Sato Koichi, Wei Mian, Kim,Gowoon, Ohta,Hiromichi. Effect of lattice distortions on the electron and thermal transport properties of transparent oxide semiconductor Ba1 − xSrxSnO3 solid solution films. Journal of Applied Physics, 127(11), 115701, 2020 and may be found at https://doi.org/10.1063/5.0002172 . |
| Type: | article |
| URI: | http://hdl.handle.net/2115/80627 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
|
Submitter: 太田 裕道
|
