|
|
Hokkaido University Collection of Scholarly and Academic Papers >
Research Institute for Electronic Science >
Peer-reviewed Journal Articles, etc >
Fabrication and Operating Mechanism of Deep-UV Transparent Semiconducting SrSnO3-Based Thin Film Transistor
| Title: | Fabrication and Operating Mechanism of Deep-UV Transparent Semiconducting SrSnO3-Based Thin Film Transistor |
| Authors: | Wei, Mian Browse this author | | Gong, Lizhikun Browse this author | | Liang, Dou-dou Browse this author | | Cho, Hai Jun Browse this author | | Ohta, Hiromichi Browse this author →KAKEN DB |
| Keywords: | deep-UV transparent semiconductors | | effective thickness | | SrSnO3 | | thermopower modulation |
| Issue Date: | Jul-2020 |
| Publisher: | John Wiley & Sons |
| Journal Title: | Advanced electronic materials |
| Volume: | 6 |
| Issue: | 7 |
| Start Page: | 2000100 |
| Publisher DOI: | 10.1002/aelm.202000100 |
| Abstract: | Thin film transistors (TFT) with deep-UV transparency are a promising component for next-generation optoelectronics such as biosensors. Among several deep-UV transparent oxide semiconductors, SrSnO(3)is an excellent candidate material owing to its wide band gap (approximate to 4.6 eV) and rather high carrier electron mobility. Herein, fabrication and operation mechanism of the SrSnO3-TFT is shown. A metal-insulator-semiconductor structure is fabricated on a 28 nm-thick SrSnO(3)film. The resultant TFT shows clear transistor characteristics; the on-to-off current ratio is approximate to 10(2), the threshold voltage is approximate to-18 V, and the field-effect mobility is approximate to 14 cm(2)V(-1)s(-1). The effective thickness of the electron channel gradually increases with gate voltage and saturates at approximate to 5 nm, which is evaluated by the thermopower modulation. The present results will be helpful for utilizing deep-UV transparent TFTs for biosensing applications. |
| Rights: | This is the peer reviewed version of the following article: Wei, M., Gong, L., Liang, D., Cho, H. J., Ohta, H., Fabrication and Operating Mechanism of Deep‐UV Transparent Semiconducting SrSnO3‐Based Thin Film Transistor. Adv. Electron. Mater. 2020, 6, 2000100, which has been published in final form at https://doi.org/10.1002/aelm.202000100 . This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving. |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/82112 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
|
Submitter: 太田 裕道
|
