|
Hokkaido University Collection of Scholarly and Academic Papers >
Research Institute for Electronic Science >
Peer-reviewed Journal Articles, etc >
Coexistence of High Electron Conduction and Low Heat Conduction in Tungsten Oxide Epitaxial Films with 1D Atomic Defect Tunnels
| Title: | Coexistence of High Electron Conduction and Low Heat Conduction in Tungsten Oxide Epitaxial Films with 1D Atomic Defect Tunnels |
| Authors: | Kim, Gowoon Browse this author | | Feng, Bin Browse this author | | Sheu, Yu-Miin Browse this author | | Cho, Hai Jun Browse this author | | Ikuhara, Yuichi Browse this author | | Ohta, Hiromichi Browse this author →KAKEN DB |
| Keywords: | thermal conductivity | | electrical conductivity | | tungsten oxide | | 1D atomic defect tunnel | | epitaxial film | | pulsed laser deposition |
| Issue Date: | 25-Aug-2020 |
| Publisher: | American Chemical Society |
| Journal Title: | ACS Applied Electronic Materials |
| Volume: | 2 |
| Issue: | 8 |
| Start Page: | 2507 |
| End Page: | 2513 |
| Publisher DOI: | 10.1021/acsaelm.0c00428 |
| Abstract: | Materials showing unusual electron and heat conduction such as the coexistence of high electron conduction and low heat conduction are essentially important to realize efficient thermal management systems. Although introducing point defects or layers is known as an effective way to reduce the thermal conductivity, the coexistence of high electron conduction and low heat conduction is still challenging because of the fact that electrons and phonons are scattered simultaneously by impurities, defects, and boundaries. Although oxygen-deficient tungsten oxide (WOx) films (2.7 < x < 3.0) show the desired properties, the origin is still unclear. Here, we report that one-dimensional (1D) atomic defect tunnels give rise to the coexistence of low thermal conductivity and high electrical conductivity of WOx films. We fabricated WOx epitaxial films on LaAlO3 substrates under a precisely controlled oxygen atmosphere. Crystallographic analyses revealed that 1D atomic defect tunnels are formed randomly along the rectangular-shaped grains in the in-plane direction. The cross-plane thermal conductivity of the WOx films dramatically decreased with decreasing x, while the electrical conductivity drastically increased because of an increase of carrier electrons, and high electron conduction and low heat conduction coexist when x < 2.9. The present finding would be useful to design efficient thermal management materials. |
| Rights: | This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsaelm.0c00428 . |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/82516 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
|
Submitter: 太田 裕道
|
